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TMS62256-12DH

Texas Instruments

TMS62256-12DH by Texas Instruments

TMS62256-12DH by Texas Instruments is a 32Kx8 SRAM with 120ns access time, operating at 5V. It features 3-STATE output and common I/O type, suitable for commercial applications requiring fast and reliable memory storage in a small outline package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,486 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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5,486

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-

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Digiode

USA . 3,141 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,141

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,077 parts In-Stock

1+ parts

$4.364

100+ parts

$405.233

1k+ parts

$3.927

10k+ parts

-

2,077

$4.364

$405.233

$3.927

-

DigiPath Technology Company

USA . 136 parts In-Stock

1+ parts

$4.805

100+ parts

-

1k+ parts

-

10k+ parts

-

136

$4.805

-

-

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ChromeModa Solutions

Germany . 2,836 parts In-Stock

1+ parts

$4.903

100+ parts

$4.020

1k+ parts

-

10k+ parts

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2,836

$4.903

$4.020

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-

IDEA Electronic Components Group

UK . 2,145 parts In-Stock

1+ parts

$4.903

100+ parts

-

1k+ parts

$4.413

10k+ parts

-

2,145

$4.903

-

$4.413

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AZTECH Wire

Italy . 406 parts In-Stock

1+ parts

$5.516

100+ parts

-

1k+ parts

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10k+ parts

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406

$5.516

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One Stop Electronics

USA . 569 parts In-Stock

1+ parts

$21.000

100+ parts

-

1k+ parts

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10k+ parts

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569

$21.000

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Corphita

USA . 2,416 parts In-Stock

1+ parts

-

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2,416

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Overview

Looking for reliable memory solutions? Look no further than the TMS62256-12DH by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality SRAM products like the TMS62256-12DH that offer fast access times and low power consumption. Ideal for a wide range of applications, this memory IC provides customers with the value, benefits, and advantages they need to enhance their projects. Upgrade to the TMS62256-12DH today and experience superior performance and efficiency!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the SRAM, ensuring it can withstand various environmental conditions.

Surface Mount: YES

Being surface mountable makes installation easier and allows for more compact designs in electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster data access without the need for clock synchronization, increasing efficiency.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V makes it compatible with a wide range of systems and applications.

Organization: 32KX8

With a capacity of 32K words and a width of 8 bits, this SRAM offers sufficient storage and data handling capabilities for various tasks.

Technology: CMOS

CMOS technology ensures low power consumption and reliable performance, making the SRAM energy-efficient and long-lasting.

Maximum Access Time: 120 ns

Fast access time allows for quick retrieval of data, improving overall system responsiveness.

Technical Specifications

SRAM TMS62256-12DH attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

120 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G28

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP28,.5

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.002 Amp

Minimum Standby Voltage:

4.5 V

Sub-Category:

SRAMs

Maximum Supply Current:

15 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS62256-12DH Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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