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TMS62457-45DJ

Texas Instruments

TMS62457-45DJ by Texas Instruments

TMS62457-45DJ by Texas Instruments is a 256Kx4 SRAM with 45ns access time, operating at 5V. It features separate I/O, 3-state output, and operates in asynchronous mode. Ideal for commercial applications requiring fast memory access in small outline packages.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,935 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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6,935

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-

-

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Digiode

USA . 3,628 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,628

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 236 parts In-Stock

1+ parts

$2.768

100+ parts

-

1k+ parts

$3.252

10k+ parts

-

236

$2.768

-

$3.252

-

DigiPath Technology Company

USA . 733 parts In-Stock

1+ parts

$3.048

100+ parts

$2.804

1k+ parts

-

10k+ parts

-

733

$3.048

$2.804

-

-

ChromeModa Solutions

Germany . 2,448 parts In-Stock

1+ parts

$3.110

100+ parts

$2.550

1k+ parts

-

10k+ parts

-

2,448

$3.110

$2.550

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-

IDEA Electronic Components Group

UK . 1,516 parts In-Stock

1+ parts

$3.110

100+ parts

-

1k+ parts

$2.799

10k+ parts

-

1,516

$3.110

-

$2.799

-

AZTECH Wire

Italy . 885 parts In-Stock

1+ parts

$16.726

100+ parts

-

1k+ parts

-

10k+ parts

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885

$16.726

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-

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One Stop Electronics

USA . 1,014 parts In-Stock

1+ parts

$20.000

100+ parts

-

1k+ parts

-

10k+ parts

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1,014

$20.000

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-

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Corphita

USA . 1,057 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,057

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Overview

Enhance your electronic projects with the TMS62457-45DJ by Texas Instruments, a high-quality SRAM memory chip that offers reliability and performance. Designed by a trusted manufacturer, this product is perfect for various applications in the technology industry. With its superior features and innovative design, the TMS62457-45DJ provides customers with exceptional value, efficiency, and speed. Upgrade your projects today with this top-of-the-line memory chip for seamless operation and enhanced functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material makes the product lightweight and durable, ideal for various applications.

Surface Mount: YES

Being surface mountable allows for easy integration into circuit boards, saving space and simplifying assembly.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode provides flexibility and simplicity in data access and control, suiting a wide range of applications.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with standard power sources, making integration straightforward.

No. of Words: 262144 words

With a high number of words, this SRAM product offers ample memory storage capacity for data-intensive tasks.

Maximum Access Time: 45 ns

The fast maximum access time ensures quick data retrieval, enhancing the overall performance of the product.

Technical Specifications

SRAM TMS62457-45DJ attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

45 ns

Input/Output Type:

SEPARATE

JESD-30 Code:

R-PDSO-J32

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

32

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256KX4

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOJ

Package Equivalence Code:

SOJ32,.44

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.002 Amp

Minimum Standby Voltage:

4.5 V

Sub-Category:

SRAMs

Maximum Supply Current:

120 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Trade Compliance

TMS62457-45DJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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