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TMS62256L-10DH

Texas Instruments

TMS62256L-10DH by Texas Instruments

TMS62256L-10DH by Texas Instruments is a 32Kx8 SRAM with 100ns access time, operating at 5V. It features 3-STATE output and common I/O type, suitable for commercial applications requiring fast and reliable memory storage in a small outline package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,042 parts In-Stock

1+ parts

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3,042

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Vyrian

USA . 2,879 parts In-Stock

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2,879

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Q Components

USA . 11 parts In-Stock

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11

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 150 parts In-Stock

1+ parts

$3.000

100+ parts

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150

$3.000

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Parana Technologies

USA . 648 parts In-Stock

1+ parts

$4.367

100+ parts

-

1k+ parts

$4.785

10k+ parts

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648

$4.367

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$4.785

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DigiPath Technology Company

USA . 1,411 parts In-Stock

1+ parts

$4.809

100+ parts

-

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1,411

$4.809

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ChromeModa Solutions

Germany . 724 parts In-Stock

1+ parts

$4.907

100+ parts

$4.024

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724

$4.907

$4.024

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IDEA Electronic Components Group

UK . 476 parts In-Stock

1+ parts

$4.907

100+ parts

-

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$4.416

10k+ parts

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476

$4.907

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$4.416

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AZTECH Wire

Italy . 875 parts In-Stock

1+ parts

$11.848

100+ parts

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875

$11.848

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Corphita

USA . 1,884 parts In-Stock

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1,884

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Overview

Unlock the power of reliable and high-quality memory with the Texas Instruments TMS62256L-10DH SRAM. Crafted by an industry leader known for excellence, this product offers a seamless experience for a wide range of applications. With a user-friendly design and top-notch technology, customers can trust in the value and performance that this memory chip provides. Whether used in industrial equipment, networking devices, or consumer electronics, the TMS62256L-10DH ensures optimal functionality and efficiency. Elevate your projects with this exceptional product from Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the SRAM, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy and secure installation on circuit boards, saving time and effort during assembly.

Operating Mode: ASYNCHRONOUS

Enables independent operation without the need for synchronized clock signals, improving flexibility in usage.

Nominal Supply Voltage / Vsup (V): 5

Standard 5V supply voltage ensures compatibility with most systems and devices.

Power Supplies (V): 5

Consistent power supply voltage helps maintain stable performance of the SRAM.

No. of Terminals: 28

Sufficient number of terminals for connecting the SRAM to other components or devices.

Maximum Operating Temperature: 70 °C

Wide temperature range support allows for reliable operation in various environments.

Organization: 32KX8

High organization value indicates a large memory capacity for storing data efficiently.

Output Characteristics: 3-STATE

3-state output allows for multiple devices to share the same bus without interference, increasing flexibility in usage.

Memory IC Type: STANDARD SRAM

Standard SRAM type ensures compatibility with a wide range of systems and applications.

Technical Specifications

SRAM TMS62256L-10DH attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

100 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G28

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP28,.5

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.00005 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

15 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS62256L-10DH Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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