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TMS6264L-12NW

Texas Instruments

TMS6264L-12NW by Texas Instruments

TMS6264L-12NW by Texas Instruments is an 8Kx8 SRAM with 120ns access time, operating at 5V. It features a 3-STATE output and consumes up to 15mA supply current. Ideal for applications requiring fast and reliable memory storage in commercial temperature environments.

Median Price

$2.414

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

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$2.414

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Vyrian

USA . 4,177 parts In-Stock

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Digiode

USA . 2,143 parts In-Stock

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Q Components

USA . 765 parts In-Stock

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ABC Electronics Ltd.

UK . 21 parts In-Stock

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ComSIT Distribution GmbH

Germany . 10 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 4 parts In-Stock

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J & M Industries LLC

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LittleDiode

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Distributors (Availability)

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Parana Technologies

USA . 1,031 parts In-Stock

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$2.544

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$3.031

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$2.544

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DigiPath Technology Company

USA . 1,694 parts In-Stock

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$2.801

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$2.577

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ChromeModa Solutions

Germany . 2,447 parts In-Stock

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$2.858

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$2.344

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IDEA Electronic Components Group

UK . 1,717 parts In-Stock

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$2.858

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$2.572

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AZTECH Wire

Italy . 497 parts In-Stock

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$16.985

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One Stop Electronics

USA . 242 parts In-Stock

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$18.000

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Corphita

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Overview

Unlock the power of efficient data storage with the Texas Instruments TMS6264L-12NW SRAM memory. Known for their superior quality and reliability, Texas Instruments delivers cutting-edge technology in a compact package, ideal for a wide range of applications. With a 8KX8 organization and 3-STATE output characteristics, this Standard SRAM memory offers fast access times and low standby current, ensuring optimal performance for your projects. Trust Texas Instruments to provide you with the value, benefits, and advantages you need for seamless integration and reliable operation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials make the package durable and resistant to physical damage, ensuring a longer lifespan for the product.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V makes the SRAM compatible with a wide range of systems, offering versatility in application.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature of 70°C, the SRAM can function effectively in various environmental conditions without overheating.

Memory Width: 8

An 8-bit memory width allows for efficient data processing and storage capabilities, suitable for a range of computing tasks.

Technology: CMOS

Complementary Metal-Oxide-Semiconductor (CMOS) technology provides low power consumption and high noise immunity, improving overall performance and reliability.

Maximum Access Time: 120 ns

A fast maximum access time of 120 nanoseconds enables quick data retrieval and processing, enhancing the overall speed and efficiency of the product.

Technical Specifications

SRAM TMS6264L-12NW attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

120 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDIP-T28

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

28

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.00005 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

15 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS6264L-12NW Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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