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TMS62256-12NW

Texas Instruments

TMS62256-12NW by Texas Instruments

TMS62256-12NW by Texas Instruments is a 32Kx8 SRAM with 120ns access time, operating at 5V. It features 3-STATE output and common I/O type, suitable for commercial temperature applications. With a memory density of 262144 bits, it is ideal for parallel memory operations in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

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Vyrian

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Digiode

USA . 1,605 parts In-Stock

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Q Components

USA . 96 parts In-Stock

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Electronics Depot

USA . 61 parts In-Stock

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Prism Electronics

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Bristol Electronics

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MRC Electronics

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Component Electronics Inc.

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Resion

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Corel Iberica Componentes, S.L.

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Parana Technologies

USA . 667 parts In-Stock

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$4.054

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$4.516

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ChromeModa Solutions

Germany . 6,577 parts In-Stock

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IDEA Electronic Components Group

UK . 934 parts In-Stock

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AZTECH Wire

Italy . 762 parts In-Stock

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One Stop Electronics

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Corphita

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DigiPath Technology Company

USA . 1,769 parts In-Stock

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Assy Fe

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Overview

Upgrade your electronic devices with the Texas Instruments TMS62256-12NW SRAM, offering top-notch quality and reliability. Manufactured by a trusted industry leader, this memory chip is perfect for a wide range of applications. With its 32Kx8 organization and 3-state output characteristics, this CMOS technology-based SRAM delivers optimal performance. Trust in Texas Instruments to provide you with the value, benefits, and advantages you need for seamless operation in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and reliability of the product, making it suitable for various applications.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexibility in data transfer and processing, making the product versatile and efficient.

Nominal Supply Voltage / Vsup (V): 5

A standard voltage supply of 5V ensures compatibility with common power sources and ease of integration.

Package Style (Meter): IN-LINE

The in-line package style enhances the product's space-saving design and ease of installation in various systems.

Technology: CMOS

CMOS technology offers low power consumption and high speed performance, making the product energy-efficient and reliable.

Memory IC Type: STANDARD SRAM

Standard SRAM memory IC type ensures compatibility with a wide range of systems and applications, making it a versatile choice.

Technical Specifications

SRAM TMS62256-12NW attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

120 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDIP-T28

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.002 Amp

Minimum Standby Voltage:

4.5 V

Sub-Category:

SRAMs

Maximum Supply Current:

15 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS62256-12NW Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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