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TMS6264L-10N

Texas Instruments

TMS6264L-10N by Texas Instruments

TMS6264L-10N by Texas Instruments is an 8Kx8 SRAM with 100ns access time, operating at 5V. It has a memory density of 65536 bits and features a common asynchronous input/output type. Ideal for commercial applications requiring fast and reliable parallel memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,825 parts In-Stock

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3,825

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Vyrian

USA . 2,445 parts In-Stock

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2,445

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Distributors (Availability)

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Parana Technologies

USA . 259 parts In-Stock

1+ parts

$2.173

100+ parts

-

1k+ parts

$2.686

10k+ parts

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259

$2.173

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$2.686

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DigiPath Technology Company

USA . 850 parts In-Stock

1+ parts

$2.393

100+ parts

$2.202

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850

$2.393

$2.202

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ChromeModa Solutions

Germany . 1,351 parts In-Stock

1+ parts

$2.442

100+ parts

$2.002

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1,351

$2.442

$2.002

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IDEA Electronic Components Group

UK . 806 parts In-Stock

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$2.442

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$2.198

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806

$2.442

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$2.198

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One Stop Electronics

USA . 1,346 parts In-Stock

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$10.000

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1,346

$10.000

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AZTECH Wire

Italy . 523 parts In-Stock

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$19.413

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523

$19.413

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Corphita

USA . 4,240 parts In-Stock

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Overview

Unlock the power of reliable data storage with the TMS6264L-10N by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers exceptional quality and performance in their SRAM products. The TMS6264L-10N is perfect for a wide range of applications, offering customers a seamless experience with its common input/output type and 3-state output characteristics. With a maximum access time of 100 ns and a memory density of 65536 bits, this standard SRAM memory IC provides value and benefits that will elevate your projects to the next level. Partner with Texas Instruments and experience the difference in quality and innovation today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material is durable and lightweight, making the product suitable for various applications.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster and more flexible data access, improving overall performance.

Nominal Supply Voltage / Vsup (V): 5

A standard supply voltage of 5V ensures compatibility with many systems and easy integration.

No. of Terminals: 28

Having 28 terminals allows for versatile connectivity options and expanded functionality.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, the product can perform reliably in various environments.

Memory Width: 8

Having a memory width of 8 bits enables efficient data storage and retrieval.

Technology: CMOS

CMOS technology offers low power consumption and high speed, making the product energy efficient and fast.

Maximum Access Time: 100 ns

A fast maximum access time of 100 nanoseconds ensures quick data access and processing.

Technical Specifications

SRAM TMS6264L-10N attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

100 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDIP-T28

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

28

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP28,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.00005 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

15 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS6264L-10N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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