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TMS62256L-15NW

Texas Instruments

TMS62256L-15NW by Texas Instruments

TMS62256L-15NW by Texas Instruments is a 32Kx8 SRAM with 150ns access time, operating at 5V. It has 28 terminals in an in-line package style and offers 262144 bits memory density. Ideal for commercial applications requiring fast and reliable data storage with low standby current consumption.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,175 parts In-Stock

1+ parts

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6,175

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Digiode

USA . 2,790 parts In-Stock

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2,790

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 162 parts In-Stock

1+ parts

$2.975

100+ parts

-

1k+ parts

$3.476

10k+ parts

-

162

$2.975

-

$3.476

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DigiPath Technology Company

USA . 2,032 parts In-Stock

1+ parts

$3.276

100+ parts

$3.014

1k+ parts

-

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2,032

$3.276

$3.014

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ChromeModa Solutions

Germany . 5,381 parts In-Stock

1+ parts

$3.343

100+ parts

$2.741

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-

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5,381

$3.343

$2.741

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IDEA Electronic Components Group

UK . 76 parts In-Stock

1+ parts

$3.343

100+ parts

-

1k+ parts

$3.009

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76

$3.343

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$3.009

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AZTECH Wire

Italy . 781 parts In-Stock

1+ parts

$18.974

100+ parts

-

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781

$18.974

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One Stop Electronics

USA . 784 parts In-Stock

1+ parts

$27.000

100+ parts

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784

$27.000

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Corphita

USA . 1,752 parts In-Stock

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1,752

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Overview

Experience the reliability and superior performance of the TMS62256L-15NW by Texas Instruments, a leading manufacturer in the industry. This Standard SRAM is perfect for a wide range of applications, offering 32Kx8 organization with 3-STATE output characteristics. With a maximum access time of 150 ns and a minimum standby voltage of 2V, this memory IC provides unmatched value and efficiency. Trust in Texas Instruments to deliver quality products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material ensures durability and protection for the SRAM, making it suitable for various environmental conditions.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent operation of the SRAM without the need for a clock signal, providing flexibility in data access.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage ensures compatibility with standard power sources, making it easy to integrate into existing systems.

No. of Terminals: 28

The 28 terminals provide sufficient connectivity options for interfacing the SRAM with other components in a system.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70°C ensures reliable performance even in demanding thermal conditions.

Memory Density: 262144 bit

The high memory density of 262144 bits allows for storing a large amount of data efficiently.

Maximum Access Time: 150 ns

The fast maximum access time of 150 ns ensures quick access to stored data, making the SRAM suitable for high-performance applications.

Technical Specifications

SRAM TMS62256L-15NW attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

150 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDIP-T28

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.00005 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

15 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS62256L-15NW Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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