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TMS62256L-85NW

Texas Instruments

TMS62256L-85NW by Texas Instruments

TMS62256L-85NW by Texas Instruments is a 32Kx8 SRAM with 85ns access time, operating at 5V. It features 3-STATE output and common I/O type, suitable for commercial applications requiring fast memory access in a rectangular package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,799 parts In-Stock

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2,799

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Digiode

USA . 2,190 parts In-Stock

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2,190

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Q Components

USA . 63 parts In-Stock

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63

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Corel Iberica Componentes, S.L.

Spain . 2 parts In-Stock

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Inland Empire Components Inc.

USA . 2 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 971 parts In-Stock

1+ parts

$4.068

100+ parts

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1k+ parts

$4.532

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971

$4.068

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$4.532

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DigiPath Technology Company

USA . 1,516 parts In-Stock

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$4.480

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1,516

$4.480

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ChromeModa Solutions

Germany . 2,849 parts In-Stock

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$4.571

100+ parts

$3.748

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2,849

$4.571

$3.748

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IDEA Electronic Components Group

UK . 952 parts In-Stock

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$4.571

100+ parts

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$4.114

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952

$4.571

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$4.114

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AZTECH Wire

Italy . 653 parts In-Stock

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$14.915

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653

$14.915

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One Stop Electronics

USA . 797 parts In-Stock

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$29.000

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797

$29.000

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Corphita

USA . 3,917 parts In-Stock

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Assy Fe

Spain . 14 parts In-Stock

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Overview

Discover the superior performance and reliability of the TMS62256L-85NW by Texas Instruments, a leading manufacturer in the industry. This SRAM memory chip offers unmatched quality and efficiency, making it perfect for a wide range of applications. With a 32Kx8 organization and 3-STATE output characteristics, this product provides seamless operation and optimal functionality. Trust Texas Instruments to deliver cutting-edge technology that exceeds expectations and unlocks endless possibilities for your projects. Elevate your designs with the TMS62256L-85NW and experience unparalleled value and performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable devices.

Input/Output Type: COMMON

Common input/output type simplifies the interfacing of this SRAM with other components, reducing design complexity.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V, this SRAM is compatible with standard power supplies, making it easy to integrate into existing systems.

No. of Words: 32768 words

With a high number of words, this SRAM can store a large amount of data, suitable for applications requiring extensive memory storage.

Maximum Access Time: 85 ns

The fast access time of 85 ns ensures quick read and write operations, making this SRAM suitable for high-performance computing applications.

Technical Specifications

SRAM TMS62256L-85NW attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

85 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDIP-T28

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.00005 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

15 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS62256L-85NW Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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