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TMS6264L-15DH

Texas Instruments

TMS6264L-15DH by Texas Instruments

TMS6264L-15DH by Texas Instruments is an 8KX8 SRAM with 150ns access time, operating at 5V. It features a small outline package and 3-state output characteristics. Ideal for commercial applications requiring fast and reliable memory storage in electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,742 parts In-Stock

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2,742

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Vyrian

USA . 2,527 parts In-Stock

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2,527

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MISTER SPROCKETS

USA . 150 parts In-Stock

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150

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Q Components

USA . 26 parts In-Stock

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26

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Distributors (Availability)

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Parana Technologies

USA . 652 parts In-Stock

1+ parts

$3.631

100+ parts

-

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$4.142

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652

$3.631

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$4.142

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DigiPath Technology Company

USA . 2,268 parts In-Stock

1+ parts

$3.998

100+ parts

$3.679

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2,268

$3.998

$3.679

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IDEA Electronic Components Group

UK . 1,701 parts In-Stock

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$4.080

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$3.672

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1,701

$4.080

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$3.672

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ChromeModa Solutions

Germany . 1,597 parts In-Stock

1+ parts

$4.080

100+ parts

$3.346

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1,597

$4.080

$3.346

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AZTECH Wire

Italy . 350 parts In-Stock

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$16.171

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$16.171

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One Stop Electronics

USA . 803 parts In-Stock

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$22.000

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803

$22.000

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Corphita

USA . 3,885 parts In-Stock

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Overview

Experience the superior quality and reliability of Texas Instruments with the TMS6264L-15DH SRAM memory chip. Ideal for a wide range of applications, this memory IC offers fast access times and low power consumption, making it perfect for high-performance systems. With its 8Kx8 organization and 3-STATE output characteristics, this chip provides seamless integration and efficient operation. Trust in Texas Instruments for cutting-edge technology and exceptional value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the SRAM, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, making integration simpler.

Operating Mode: ASYNCHRONOUS

Enables data to be processed and accessed quickly without the need for synchronization, improving overall performance.

Nominal Supply Voltage / Vsup (V): 5

Provides a standard and stable voltage supply for the SRAM to operate reliably.

Technology: CMOS

CMOS technology ensures lower power consumption and higher speeds, making this SRAM energy-efficient and fast.

Maximum Access Time: 150 ns

With a fast access time, data can be retrieved quickly, enhancing the overall efficiency of the product.

Technical Specifications

SRAM TMS6264L-15DH attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

150 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G28

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

28

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP28,.5

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.00005 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

12 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS6264L-15DH Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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