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TMS27C32-120JE4

Texas Instruments

TMS27C32-120JE4 by Texas Instruments

TMS27C32-120JE4 by Texas Instruments is a 4KX8 EPROM with 120 ns access time, operating at 5V. It features a CMOS technology, 3-STATE output, and INDUSTRIAL temperature grade. Commonly used in parallel applications for memory storage due to its 32768 bit density and UVPROM type.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,447 parts In-Stock

1+ parts

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7,447

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Digiode

USA . 1,871 parts In-Stock

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1,871

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 899 parts In-Stock

1+ parts

$2.054

100+ parts

-

1k+ parts

$2.577

10k+ parts

-

899

$2.054

-

$2.577

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DigiPath Technology Company

USA . 1,242 parts In-Stock

1+ parts

$2.262

100+ parts

$2.081

1k+ parts

-

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1,242

$2.262

$2.081

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ChromeModa Solutions

Germany . 4,566 parts In-Stock

1+ parts

$2.308

100+ parts

$1.893

1k+ parts

-

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4,566

$2.308

$1.893

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IDEA Electronic Components Group

UK . 489 parts In-Stock

1+ parts

$2.308

100+ parts

-

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$2.077

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489

$2.308

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$2.077

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AZTECH Wire

Italy . 831 parts In-Stock

1+ parts

$12.038

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831

$12.038

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One Stop Electronics

USA . 1,317 parts In-Stock

1+ parts

$29.000

100+ parts

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1,317

$29.000

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Corphita

USA . 4,781 parts In-Stock

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4,781

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Overview

Enhance your electronic projects with the TMS27C32-120JE4 EPROM by Texas Instruments, a reliable and high-quality memory IC that offers unparalleled performance. Designed with cutting-edge technology and industrial-grade materials, this EPROM provides a seamless experience in various applications. With a wide operating temperature range and low power consumption, it guarantees efficient operation while ensuring data integrity. Trust Texas Instruments for top-notch products that deliver exceptional value and benefits to meet your needs. Experience the difference with the TMS27C32-120JE4 EPROM today!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired material ensures durability and resistance to heat, making this product suitable for industrial applications.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent control of read and write operations, offering flexibility and control over data access.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power sources, making integration easier.

Memory IC Type: UVPROM

The use of UVPROM technology provides non-volatile memory storage, ensuring data retention even when power is removed.

Maximum Access Time: 120 ns

With a fast maximum access time of 120 nanoseconds, this product offers quick data retrieval for efficient performance.

Technical Specifications

EPROM TMS27C32-120JE4 attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

120 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T24

Length:

31.75 mm

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C32-120JE4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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