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TLV321AC36CPT

Texas Instruments

TLV321AC36CPT by Texas Instruments

TLV321AC36CPT by Texas Instruments is a 48-terminal cellphone IC with CMOS technology. It operates b/w 0-70°C, suitable for baseband circuits. The flatpack package has low profile and fine pitch, making it ideal for compact mobile devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,270 parts In-Stock

1+ parts

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4,270

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Vyrian

USA . 529 parts In-Stock

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529

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 212 parts In-Stock

1+ parts

$7.607

100+ parts

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212

$7.607

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Parana Technologies

USA . 1,701 parts In-Stock

1+ parts

$11.239

100+ parts

$1,043.704

1k+ parts

$10.115

10k+ parts

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1,701

$11.239

$1,043.704

$10.115

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DigiPath Technology Company

USA . 853 parts In-Stock

1+ parts

$12.375

100+ parts

$11.385

1k+ parts

-

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853

$12.375

$11.385

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ChromeModa Solutions

Germany . 2,042 parts In-Stock

1+ parts

$12.628

100+ parts

$10.355

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-

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2,042

$12.628

$10.355

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IDEA Electronic Components Group

UK . 1,014 parts In-Stock

1+ parts

$12.628

100+ parts

$11.997

1k+ parts

$11.365

10k+ parts

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1,014

$12.628

$11.997

$11.365

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One Stop Electronics

USA . 1,116 parts In-Stock

1+ parts

$652.000

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1,116

$652.000

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Corphita

USA . 3,406 parts In-Stock

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3,406

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Overview

Elevate your cellphone design with the TLV321AC36CPT by Texas Instruments. Known for their top-notch quality and innovative technology, Texas Instruments delivers cutting-edge Cellphone ICs that guarantee superior performance and reliability. This compact and versatile device offers unmatched value and benefits to customers, making it an essential component for a wide range of applications. Upgrade your products with the TLV321AC36CPT and experience the difference in performance and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the product lightweight and cost-effective.

Surface Mount: YES

Being surface mountable allows for easy and efficient assembly onto circuit boards.

Package Shape: SQUARE

The square shape of the package ensures better space utilization and compatibility with modern compact devices.

No. of Terminals: 48

Having 48 terminals allows for increased connectivity and functionality in the cellphone IC.

Package Style: FLATPACK, LOW PROFILE, FINE PITCH

The combination of flatpack, low profile, and fine pitch package style enables better thermal dissipation and signal integrity.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, the cellphone IC is suitable for a wide range of operating environments.

Minimum Operating Temperature: 0 °C

The cellphone IC can operate efficiently even at lower temperatures, enhancing its versatility.

Terminal Position: QUAD

Quad terminal position allows for enhanced stability and reliability in the connection.

Maximum Seated Height: 1.6 mm

The low seated height of 1.6mm ensures compatibility with slim devices and saves space on the PCB.

Width: 7 mm

The compact width of 7mm makes the cellphone IC suitable for smaller electronic devices.

Length: 7 mm

The short length of 7mm further contributes to the compact design and space-saving capabilities of the product.

Temperature Grade: COMMERCIAL

The commercial temperature grade ensures reliable performance in standard operating conditions.

Technology: CMOS

The CMOS technology used in the cellphone IC offers low power consumption and high-speed operation.

Terminal Form: GULL WING

The gull wing terminal form provides secure connections and ease of soldering during assembly.

Telecom IC Type: BASEBAND CIRCUIT

Being a baseband circuit type, the cellphone IC is essential for processing signals and communication functions in the device.

Nominal Supply Voltage: 3 V

The nominal supply voltage of 3V is common in many electronic devices, making it compatible with a wide range of applications.

Terminal Pitch: 0.5 mm

The fine terminal pitch of 0.5mm allows for high-density packaging and increased connectivity options.

Technical Specifications

Cellphone ICs TLV321AC36CPT attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQFP-G48

Length:

7 mm

No. of Functions:

1

No. of Terminals:

48

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

7 mm

Trade Compliance

TLV321AC36CPT Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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