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TLV321AC36CN

Texas Instruments

TLV321AC36CN by Texas Instruments

TLV321AC36CN by Texas Instruments is a Cellphone IC with 20 terminals, CMOS technology, and 3V supply voltage. It has a rectangular package style, suitable for baseband circuits in commercial temperature grades. Dimensions are 7.62mm width, 24.325mm length, and 5.08mm seated height for through-hole mounting at temperatures ranging from 0 to 70°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,460 parts In-Stock

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7,460

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Digiode

USA . 4,319 parts In-Stock

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4,319

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,281 parts In-Stock

1+ parts

$13.653

100+ parts

-

1k+ parts

$14.156

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2,281

$13.653

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$14.156

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AZTECH Wire

Italy . 237 parts In-Stock

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$15.134

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237

$15.134

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ChromeModa Solutions

Germany . 4,426 parts In-Stock

1+ parts

$15.341

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$12.580

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4,426

$15.341

$12.580

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IDEA Electronic Components Group

UK . 2,219 parts In-Stock

1+ parts

$15.341

100+ parts

$14.574

1k+ parts

$13.807

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2,219

$15.341

$14.574

$13.807

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Semicontronic

India . 485 parts In-Stock

1+ parts

$674.000

100+ parts

$657.150

1k+ parts

$653.780

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485

$674.000

$657.150

$653.780

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One Stop Electronics

USA . 954 parts In-Stock

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$796.000

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954

$796.000

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Ampacity Inc.

Singapore . 865 parts In-Stock

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$838.000

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865

$838.000

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Corphita

USA . 2,420 parts In-Stock

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2,420

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DigiPath Technology Company

USA . 1,586 parts In-Stock

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$13.831

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1,586

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$13.831

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Corohmni

South Africa . 323 parts In-Stock

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323

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Overview

Discover the ultimate solution for your cellphone IC needs with the TLV321AC36CN by Texas Instruments. Renowned for their high-quality products, Texas Instruments delivers top-of-the-line performance and reliability. Ideal for baseband circuits, this IC offers unmatched value with its commercial-grade temperature range and CMOS technology. Say goodbye to technical headaches and hello to seamless integration with the TLV321AC36CN. Elevate your product's performance today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight, cost-effective, and durable, which is ideal for mobile devices that require portability and reliability.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this cellphone IC can withstand high temperatures without compromising its performance, ensuring reliability in various environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with various digital systems, making it an efficient and reliable choice for cellphone ICs.

Nominal Supply Voltage: 3 V

The 3V nominal supply voltage is commonly used in mobile devices, providing compatibility and efficient power management for the cellphone IC.

Technical Specifications

Cellphone ICs TLV321AC36CN attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-PDIP-T20

Length:

24.325 mm

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Nominal Supply Voltage:

3 V

Surface Mount:

NO

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

TLV321AC36CN Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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