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SNJ54ACT7881HV

Texas Instruments

SNJ54ACT7881HV by Texas Instruments

SNJ54ACT7881HV by Texas Instruments is a FIFO with 1Kx18 organization, operating at 5V. It features a cycle time of 20ns and can handle a max clock frequency of 50MHz. Ideal for military applications due to its MIL-STD screening levels and wide temperature range from -55°C to 125°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,075 parts In-Stock

1+ parts

-

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8,075

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Digiode

USA . 2,639 parts In-Stock

1+ parts

-

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2,639

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,436 parts In-Stock

1+ parts

$4.744

100+ parts

-

1k+ parts

$5.243

10k+ parts

-

1,436

$4.744

-

$5.243

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DigiPath Technology Company

USA . 743 parts In-Stock

1+ parts

$5.223

100+ parts

-

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10k+ parts

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743

$5.223

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ChromeModa Solutions

Germany . 5,752 parts In-Stock

1+ parts

$5.330

100+ parts

$4.371

1k+ parts

-

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5,752

$5.330

$4.371

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IDEA Electronic Components Group

UK . 1,133 parts In-Stock

1+ parts

$5.330

100+ parts

-

1k+ parts

$4.797

10k+ parts

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1,133

$5.330

-

$4.797

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AZTECH Wire

Italy . 518 parts In-Stock

1+ parts

$17.397

100+ parts

-

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518

$17.397

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One Stop Electronics

USA . 579 parts In-Stock

1+ parts

$20.000

100+ parts

-

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579

$20.000

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Corphita

USA . 328 parts In-Stock

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328

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Overview

Experience unparalleled performance and reliability with the SNJ54ACT7881HV by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality FIFO products that are ideal for a wide range of applications. From telecommunications to industrial automation, this FIFO device offers unmatched value, benefits, and advantages to customers. Trust in Texas Instruments to provide you with high-quality solutions that meet your needs and exceed your expectations. Elevate your projects with the SNJ54ACT7881HV today!

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The use of ceramic and glass-sealed material provides durability and reliable performance, making this product suitable for harsh environments.

Cycle Time: 20 ns

With a fast cycle time of 20 ns, this FIFO device can efficiently transfer data in real-time, ideal for high-speed applications.

Operating Mode: SYNCHRONOUS

Operating in synchronous mode ensures that data transfers are coordinated and synchronized, enhancing overall system performance.

Maximum Clock Frequency (fCLK): 50 MHz

The high maximum clock frequency of 50 MHz allows for fast data processing and transfer rates, essential for demanding applications.

Technology: CMOS

Utilizing CMOS technology provides low power consumption and high noise immunity, making this FIFO device energy-efficient and reliable.

Memory IC Type: OTHER FIFO

Being a FIFO memory IC type ensures data is read and written in a first-in, first-out manner, facilitating data storage and retrieval.

Technical Specifications

FIFO SNJ54ACT7881HV attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

13 ns

Maximum Clock Frequency (fCLK):

50 MHz

Cycle Time:

20 ns

JESD-30 Code:

S-GQFP-F68

Length:

12.51 mm

Memory Density:

18432 bit

Memory IC Type:

Memory Width:

18

No. of Functions:

1

No. of Terminals:

68

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

1KX18

Output Enable:

YES

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

QFF

Package Equivalence Code:

QFL68,.5SQ,25

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

3.86 mm

Maximum Standby Current:

.0012 Amp

Sub-Category:

FIFOs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

.635 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

12.51 mm

Trade Compliance

SNJ54ACT7881HV Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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