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SNJ54ACT3632HFP

Texas Instruments

SNJ54ACT3632HFP by Texas Instruments

SNJ54ACT3632HFP by Texas Instruments is a 512x36 CMOS FIFO memory with 20ns cycle time and 50MHz clock frequency. Operating at 5V, it is ideal for military applications requiring fast data storage and retrieval in harsh environments. With a flatpack package style and gull wing terminal form, this device offers reliable performance in a compact design.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,674 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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7,674

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Digiode

USA . 392 parts In-Stock

1+ parts

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100+ parts

-

1k+ parts

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10k+ parts

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392

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,078 parts In-Stock

1+ parts

$2.123

100+ parts

-

1k+ parts

$2.635

10k+ parts

-

1,078

$2.123

-

$2.635

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DigiPath Technology Company

USA . 1,234 parts In-Stock

1+ parts

$2.337

100+ parts

$2.150

1k+ parts

-

10k+ parts

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1,234

$2.337

$2.150

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ChromeModa Solutions

Germany . 4,966 parts In-Stock

1+ parts

$2.385

100+ parts

$1.956

1k+ parts

-

10k+ parts

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4,966

$2.385

$1.956

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IDEA Electronic Components Group

UK . 1,792 parts In-Stock

1+ parts

$2.385

100+ parts

-

1k+ parts

$2.146

10k+ parts

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1,792

$2.385

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$2.146

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AZTECH Wire

Italy . 488 parts In-Stock

1+ parts

$17.737

100+ parts

-

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488

$17.737

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One Stop Electronics

USA . 1,057 parts In-Stock

1+ parts

$22.000

100+ parts

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1,057

$22.000

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Corphita

USA . 825 parts In-Stock

1+ parts

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825

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Overview

Experience unparalleled reliability and performance with the SNJ54ACT3632HFP by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-quality products that exceed expectations. The SNJ54ACT3632HFP is a FIFO memory device that offers seamless data storage and retrieval, making it ideal for a wide range of applications. From industrial automation to telecommunications, this product provides fast and efficient operation, allowing you to streamline your processes and boost productivity. Trust Texas Instruments to deliver cutting-edge technology that meets your needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Durable and reliable material choice for long-term use in various environments.

Cycle Time: 20 ns

Fast cycle time ensures quick data transfer and processing.

Operating Mode: SYNCHRONOUS

Synchronizes data transfer operations for efficient communication.

Maximum Operating Temperature: 125 °C

Can withstand high operating temperatures for extended periods.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Memory IC Type: BI-DIRECTIONAL FIFO

Bi-directional FIFO enhances data transfer capabilities in both directions.

Technical Specifications

FIFO SNJ54ACT3632HFP attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

15 ns

Additional Features:

MAILBOX

Maximum Clock Frequency (fCLK):

50 MHz

Cycle Time:

20 ns

JESD-30 Code:

S-CQFP-G132

Length:

24.13 mm

Memory Density:

18432 bit

Memory IC Type:

Memory Width:

36

No. of Functions:

1

No. of Terminals:

132

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X36

Output Enable:

NO

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

QFP

Package Equivalence Code:

QFL132,.95SQ,25

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

3.81 mm

Sub-Category:

FIFOs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.635 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

24.13 mm

Trade Compliance

SNJ54ACT3632HFP Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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