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SNJ54ABT7820GB

Texas Instruments

SNJ54ABT7820GB by Texas Instruments

SNJ54ABT7820GB by Texas Instruments is a 512x18 BI-DIRECTIONAL FIFO memory IC with 25ns cycle time, operating at 5V. It features a max clock frequency of 40MHz and MILITARY temperature grade. Ideal for applications requiring fast data transfer in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,746 parts In-Stock

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8,746

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Digiode

USA . 3,392 parts In-Stock

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3,392

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 473 parts In-Stock

1+ parts

$3.022

100+ parts

-

1k+ parts

$3.532

10k+ parts

-

473

$3.022

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$3.532

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DigiPath Technology Company

USA . 533 parts In-Stock

1+ parts

$3.328

100+ parts

$3.062

1k+ parts

-

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533

$3.328

$3.062

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ChromeModa Solutions

Germany . 3,130 parts In-Stock

1+ parts

$3.396

100+ parts

$2.785

1k+ parts

-

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3,130

$3.396

$2.785

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IDEA Electronic Components Group

UK . 1,667 parts In-Stock

1+ parts

$3.396

100+ parts

-

1k+ parts

$3.056

10k+ parts

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1,667

$3.396

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$3.056

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AZTECH Wire

Italy . 842 parts In-Stock

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$6.609

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842

$6.609

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One Stop Electronics

USA . 266 parts In-Stock

1+ parts

$18.000

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266

$18.000

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Corphita

USA . 2,181 parts In-Stock

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Overview

Elevate your system's performance with the SNJ54ABT7820GB by Texas Instruments, a premium FIFO memory IC designed for military-grade applications. With a lightning-fast cycle time of 25 ns and an impressive 512x18 organization, this synchronous device ensures seamless data flow at up to 40 MHz. Built with high-quality ceramic and metal-sealed cofired materials, this BICMOS technology marvel boasts a wide operating temperature range from -55°C to 125°C, making it ideal for harsh environments. Trust Texas Instruments' reputation for excellence and reliability, and experience the unparalleled value and benefits that the SNJ54ABT7820GB brings to your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material ensures durability and reliability, making the product suitable for demanding environments.

Cycle Time: 25 ns

The fast cycle time allows for quick data access and processing, improving overall performance.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures accurate timing and coordination of data transfers, enhancing efficiency.

Maximum Clock Frequency (fCLK): 40 MHz

The high clock frequency enables speedy data processing and throughput, making the product efficient.

Technology: BICMOS

BICMOS technology combines the advantages of both bipolar and CMOS technologies, offering high speed and low power consumption.

Memory IC Type: BI-DIRECTIONAL FIFO

Being a bi-directional FIFO, this product allows for simultaneous read and write operations, improving data handling efficiency.

Technical Specifications

FIFO SNJ54ABT7820GB attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

18 ns

Maximum Clock Frequency (fCLK):

40 MHz

Cycle Time:

25 ns

JESD-30 Code:

S-CPGA-P84

Length:

29.464 mm

Memory Density:

9216 bit

Memory IC Type:

Memory Width:

18

No. of Functions:

1

No. of Terminals:

84

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X18

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

PGA

Package Equivalence Code:

PGA84M,11X11

Package Shape:

Package Style (Meter):

GRID ARRAY

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

5.21 mm

Sub-Category:

FIFOs

Maximum Supply Current:

95 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BICMOS

Temperature Grade:

Terminal Form:

PIN/PEG

Terminal Pitch:

2.54 mm

Terminal Position:

PERPENDICULAR

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

29.464 mm

Trade Compliance

SNJ54ABT7820GB Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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