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SNJ54ACT7881PNR

Texas Instruments

SNJ54ACT7881PNR by Texas Instruments

SNJ54ACT7881PNR by Texas Instruments is a FIFO with 1KX18 organization, operating at 5V. It features a cycle time of 20ns, synchronous mode, and parallel interface. Ideal for military applications due to its low profile flatpack design and wide temperature range from -55 to 125 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,016 parts In-Stock

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4,016

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Digiode

USA . 125 parts In-Stock

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125

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 677 parts In-Stock

1+ parts

$3.224

100+ parts

-

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$3.746

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677

$3.224

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$3.746

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DigiPath Technology Company

USA . 2,212 parts In-Stock

1+ parts

$3.551

100+ parts

$3.266

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2,212

$3.551

$3.266

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ChromeModa Solutions

Germany . 4,520 parts In-Stock

1+ parts

$3.623

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$2.971

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4,520

$3.623

$2.971

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IDEA Electronic Components Group

UK . 103 parts In-Stock

1+ parts

$3.623

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$3.261

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103

$3.623

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$3.261

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AZTECH Wire

Italy . 499 parts In-Stock

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$5.000

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499

$5.000

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One Stop Electronics

USA . 598 parts In-Stock

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$12.000

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$12.000

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Corphita

USA . 3,385 parts In-Stock

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Overview

Elevate your electronics with the SNJ54ACT7881PNR by Texas Instruments, a high-quality FIFO device designed for seamless data transfer. With a reputation for reliability, Texas Instruments ensures top-notch performance in every product they create. Ideal for a wide range of applications, this innovative FIFO device offers customers unparalleled value, benefits, and advantages. Say goodbye to slow data processing and hello to efficiency with the SNJ54ACT7881PNR.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired material ensures durability and reliability, making this product suitable for harsh environments.

Cycle Time: 20 ns

With a fast cycle time of 20 ns, this FIFO chip can handle data quickly and efficiently, making it ideal for high-speed applications.

Operating Mode: SYNCHRONOUS

The synchronous operating mode helps in maintaining accurate data transfer timing, ensuring smooth operation in synchronous systems.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage provides a standard power source for the FIFO chip, making it compatible with a wide range of systems and applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C allows for reliable performance even in elevated temperature environments.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high noise immunity, making this FIFO chip efficient and reliable for data storage and retrieval.

Memory Density: 18432 bit

With a memory density of 18432 bits, this FIFO chip can store a large amount of data, making it suitable for applications requiring substantial data buffering.

Technical Specifications

FIFO SNJ54ACT7881PNR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

13 ns

Cycle Time:

20 ns

JESD-30 Code:

S-CQFP-G80

Length:

12 mm

Memory Density:

18432 bit

Memory Width:

18

No. of Functions:

1

No. of Terminals:

80

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

1KX18

Output Enable:

YES

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

12 mm

Trade Compliance

SNJ54ACT7881PNR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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