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SNJ54ALS229AFK

Texas Instruments

SNJ54ALS229AFK by Texas Instruments

SNJ54ALS229AFK by Texas Instruments is a 16x5 FIFO chip with 40ns cycle time, operating at 5V. It features synchronous operation, parallel interface, and output enable function. Ideal for military applications requiring fast data storage and retrieval in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,247 parts In-Stock

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3,247

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Vyrian

USA . 1,955 parts In-Stock

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1,955

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 775 parts In-Stock

1+ parts

$3.557

100+ parts

-

1k+ parts

$4.081

10k+ parts

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775

$3.557

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$4.081

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DigiPath Technology Company

USA . 539 parts In-Stock

1+ parts

$3.917

100+ parts

$3.604

1k+ parts

-

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539

$3.917

$3.604

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ChromeModa Solutions

Germany . 5,219 parts In-Stock

1+ parts

$3.997

100+ parts

$3.278

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5,219

$3.997

$3.278

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IDEA Electronic Components Group

UK . 962 parts In-Stock

1+ parts

$3.997

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$3.597

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962

$3.997

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$3.597

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One Stop Electronics

USA . 1,276 parts In-Stock

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$14.000

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1,276

$14.000

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AZTECH Wire

Italy . 811 parts In-Stock

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$18.173

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811

$18.173

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Corphita

USA . 1,789 parts In-Stock

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1,789

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Overview

Unlock seamless data transfer and efficient memory management with the Texas Instruments SNJ54ALS229AFK FIFO chip. Crafted with precision using high-quality materials and cutting-edge technology, this chip offers a reliable and fast solution for various applications. From industrial automation to telecommunications, this versatile chip ensures optimal performance and enhanced productivity. Experience the value of superior quality and unmatched efficiency with the SNJ54ALS229AFK by Texas Instruments.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired material ensures durability and reliability, making this product suitable for harsh operating conditions.

Cycle Time: 40 ns

The fast cycle time of 40 ns allows for quick and efficient data processing, making this FIFO a high-performance choice.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise coordination between input and output data signals, enhancing overall system performance.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V provides stable power supply, ensuring consistent performance.

Temperature Grade: MILITARY

Designed to meet military-grade standards, this FIFO can withstand extreme temperatures and rugged environments, making it reliable for critical applications.

Technical Specifications

FIFO SNJ54ALS229AFK attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

35 ns

Additional Features:

FALL-THROUGH TIME 24NS

Cycle Time:

40 ns

JESD-30 Code:

S-CQCC-N20

Length:

8.89 mm

Memory Density:

80 bit

Memory IC Type:

Memory Width:

5

No. of Functions:

1

No. of Terminals:

20

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16X5

Output Enable:

YES

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

LCC20,.35SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

2.03 mm

Sub-Category:

FIFOs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

8.89 mm

Trade Compliance

SNJ54ALS229AFK Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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