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SN74ACT7206L-50DV

Texas Instruments

SN74ACT7206L-50DV by Texas Instruments

SN74ACT7206L-50DV by Texas Instruments is a FIFO memory with 16Kx9 organization, 65ns cycle time, and 15MHz clock frequency. It operates asynchronously at 5V and is ideal for parallel data storage applications in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,891 parts In-Stock

1+ parts

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4,891

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Vyrian

USA . 3,129 parts In-Stock

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3,129

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 568 parts In-Stock

1+ parts

$3.000

100+ parts

-

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568

$3.000

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Parana Technologies

USA . 1,507 parts In-Stock

1+ parts

$3.411

100+ parts

-

1k+ parts

$3.936

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1,507

$3.411

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$3.936

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DigiPath Technology Company

USA . 502 parts In-Stock

1+ parts

$3.756

100+ parts

$3.456

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-

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502

$3.756

$3.456

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IDEA Electronic Components Group

UK . 2,305 parts In-Stock

1+ parts

$3.833

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$3.450

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2,305

$3.833

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$3.450

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ChromeModa Solutions

Germany . 232 parts In-Stock

1+ parts

$3.833

100+ parts

$3.143

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232

$3.833

$3.143

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AZTECH Wire

Italy . 762 parts In-Stock

1+ parts

$10.018

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762

$10.018

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Corphita

USA . 3,158 parts In-Stock

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Overview

Unlock seamless data transfer and efficient storage solutions with the SN74ACT7206L-50DV by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality FIFO products designed to optimize performance and reliability. Ideal for a wide range of applications, this FIFO device offers unmatched value with its fast cycle time, low power consumption, and versatile operating modes. Say goodbye to data bottlenecks and hello to enhanced productivity with the SN74ACT7206L-50DV.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection to the components inside, making the FIFO product more reliable and long-lasting.

Cycle Time: 65 ns

Fast cycle time of 65 ns ensures quick data transfer and processing, making the FIFO product efficient in handling data queues.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard supply voltage of 5V, ensuring compatibility with common power sources and ease of integration.

Memory Density: 147456 bit

High memory density of 147456 bits allows for storing a large amount of data in the FIFO product, suitable for applications requiring extensive data buffering.

Maximum Clock Frequency (fCLK): 15 MHz

Supports a maximum clock frequency of 15 MHz, enabling fast data transfer rates and real-time processing in the FIFO product.

Technical Specifications

FIFO SN74ACT7206L-50DV attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

50 ns

Maximum Clock Frequency (fCLK):

15 MHz

Cycle Time:

65 ns

JESD-30 Code:

R-PDSO-G28

Length:

18.365 mm

Memory Density:

147456 bit

Memory IC Type:

Memory Width:

9

No. of Functions:

1

No. of Terminals:

28

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

16KX9

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP28,.45

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.05 mm

Maximum Standby Current:

.002 Amp

Sub-Category:

FIFOs

Maximum Supply Current:

120 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

8.765 mm

Trade Compliance

SN74ACT7206L-50DV Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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