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SN74ABT7819-30PHR

Texas Instruments

SN74ABT7819-30PHR by Texas Instruments

SN74ABT7819-30PHR by Texas Instruments is a 512x18 FIFO with 30.03ns cycle time, operating at 5V. It features synchronous operation, 3-STATE output characteristics, and GULL WING terminal form. Ideal for applications requiring fast data transfer and storage in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,814 parts In-Stock

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Digiode

USA . 3,507 parts In-Stock

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3,507

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Distributors (Availability)

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Parana Technologies

USA . 1,144 parts In-Stock

1+ parts

$3.266

100+ parts

-

1k+ parts

$3.790

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1,144

$3.266

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$3.790

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DigiPath Technology Company

USA . 1,546 parts In-Stock

1+ parts

$3.597

100+ parts

$3.309

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-

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1,546

$3.597

$3.309

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ChromeModa Solutions

Germany . 4,792 parts In-Stock

1+ parts

$3.670

100+ parts

$3.009

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4,792

$3.670

$3.009

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IDEA Electronic Components Group

UK . 721 parts In-Stock

1+ parts

$3.670

100+ parts

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$3.303

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721

$3.670

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$3.303

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One Stop Electronics

USA . 1,211 parts In-Stock

1+ parts

$5.000

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1,211

$5.000

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AZTECH Wire

Italy . 282 parts In-Stock

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$11.859

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282

$11.859

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Corphita

USA . 1,743 parts In-Stock

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Overview

Enhance your electronic systems with the cutting-edge SN74ABT7819-30PHR by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers unmatched quality and reliability. This FIFO device is perfect for applications requiring fast and efficient data storage and retrieval. Experience seamless operation with its synchronous design and impressive 512x18 organization. With a low cycle time of 30.03 ns, this product offers exceptional performance at a nominal supply voltage of 5V. Trust Texas Instruments to provide top-notch technology that will elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable devices.

Cycle Time: 30.03 ns

The fast cycle time of 30.03 ns ensures quick and efficient data processing, suitable for high-speed applications.

Operating Mode: SYNCHRONOUS

The synchronous operating mode allows for precise timing and coordination between different components, enhancing system performance.

Nominal Supply Voltage (Vsup): 5V

The 5V supply voltage is a common standard in electronic devices, ensuring compatibility with a wide range of systems.

Memory Density: 9216 bit

With a high memory density of 9216 bit, this product can store a large amount of data, suitable for memory-intensive applications.

Maximum Access Time: 14 ns

The low maximum access time of 14 ns ensures quick retrieval of data, improving overall system efficiency.

Technical Specifications

FIFO SN74ABT7819-30PHR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

14 ns

Cycle Time:

30.03 ns

JESD-30 Code:

R-PQFP-G80

Length:

20 mm

Memory Density:

9216 bit

Memory Width:

18

No. of Functions:

1

No. of Terminals:

80

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X18

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

QFP

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

3.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

QUAD

Width:

14 mm

Trade Compliance

SN74ABT7819-30PHR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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