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SNJ54ALS232AFK

Texas Instruments

SNJ54ALS232AFK by Texas Instruments

SNJ54ALS232AFK by Texas Instruments is a 16x4 FIFO chip with 40ns cycle time, operating at 5V. It has a max clock frequency of 25MHz and can withstand temperatures from -55 to 125°C. Ideal for military-grade applications requiring fast synchronous data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,032 parts In-Stock

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4,032

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Digiode

USA . 2,520 parts In-Stock

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2,520

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Distributors (Availability)

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Parana Technologies

USA . 1,183 parts In-Stock

1+ parts

$2.053

100+ parts

-

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$2.575

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1,183

$2.053

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$2.575

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ChromeModa Solutions

Germany . 2,766 parts In-Stock

1+ parts

$2.307

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$1.892

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2,766

$2.307

$1.892

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IDEA Electronic Components Group

UK . 766 parts In-Stock

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$2.307

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$2.076

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766

$2.307

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$2.076

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One Stop Electronics

USA . 1,296 parts In-Stock

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$4.000

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1,296

$4.000

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AZTECH Wire

Italy . 231 parts In-Stock

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$14.615

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$14.615

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Corphita

USA . 3,903 parts In-Stock

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DigiPath Technology Company

USA . 1,274 parts In-Stock

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$2.080

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Overview

Experience superior performance and reliability with the Texas Instruments SNJ54ALS232AFK FIFO chip carrier. Crafted with top-notch ceramic and metal-sealed materials, this synchronous device operates at a speedy 25 MHz clock frequency, ensuring seamless data transfer in military-grade applications. With 64-bit memory density and a compact square package shape, this FIFO offers a high level of functionality while saving space. Trust Texas Instruments for cutting-edge technology that delivers exceptional value and efficiency to meet all your electronic needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired materials ensures durability and reliability in various operating conditions.

Cycle Time: 40 ns

The fast cycle time of 40 ns allows for quick data transfer within the FIFO, making it efficient for high-speed applications.

Operating Mode: SYNCHRONOUS

The synchronous operation of this FIFO ensures that data is transmitted and processed in sync with the clock signal, improving overall system performance.

Maximum Clock Frequency (fCLK): 25 MHz

With a maximum clock frequency of 25 MHz, this FIFO can handle high-speed data processing tasks effectively.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this FIFO energy-efficient and reliable for long-term use.

Memory Width: 4

The memory width of 4 bits allows for efficient storage and retrieval of data, making this FIFO suitable for applications requiring moderate data capacity.

Maximum Access Time: 35 ns

The fast maximum access time of 35 ns ensures that data can be retrieved quickly from the FIFO, reducing latency and improving overall system performance.

Technical Specifications

FIFO SNJ54ALS232AFK attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

35 ns

Additional Features:

FALL-THROUGH TIME 24NS

Maximum Clock Frequency (fCLK):

25 MHz

Cycle Time:

40 ns

JESD-30 Code:

S-CQCC-N20

Length:

8.89 mm

Memory Density:

64 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

20

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16X4

Output Enable:

YES

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

LCC20,.35SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

2.03 mm

Sub-Category:

FIFOs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

8.89 mm

Trade Compliance

SNJ54ALS232AFK Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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