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SN74ACT3632-30PCBR

Texas Instruments

SN74ACT3632-30PCBR by Texas Instruments

SN74ACT3632-30PCBR by Texas Instruments is a FIFO with 512x36 organization, 30 ns cycle time, and 5V nominal voltage. It is used in applications requiring fast synchronous operation and 3-STATE output characteristics. Ideal for commercial temperature grade environments where parallel memory width of 36 bits is needed.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,783 parts In-Stock

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5,783

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Digiode

USA . 2,781 parts In-Stock

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2,781

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,254 parts In-Stock

1+ parts

$4.915

100+ parts

-

1k+ parts

$5.448

10k+ parts

-

1,254

$4.915

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$5.448

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DigiPath Technology Company

USA . 904 parts In-Stock

1+ parts

$5.413

100+ parts

-

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904

$5.413

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ChromeModa Solutions

Germany . 5,790 parts In-Stock

1+ parts

$5.523

100+ parts

$4.529

1k+ parts

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5,790

$5.523

$4.529

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IDEA Electronic Components Group

UK . 376 parts In-Stock

1+ parts

$5.523

100+ parts

-

1k+ parts

$4.971

10k+ parts

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376

$5.523

-

$4.971

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AZTECH Wire

Italy . 525 parts In-Stock

1+ parts

$8.232

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525

$8.232

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One Stop Electronics

USA . 924 parts In-Stock

1+ parts

$29.000

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924

$29.000

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Corphita

USA . 1,966 parts In-Stock

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Overview

Enhance your electronic projects with the SN74ACT3632-30PCBR by Texas Instruments, a top-quality FIFO memory solution designed to meet your needs. With its reliable performance and durability, Texas Instruments sets the standard for excellence in the industry. This versatile component is perfect for a wide range of applications, offering seamless integration and optimal functionality. Trust in Texas Instruments to deliver unmatched value and efficiency, ensuring that your projects run smoothly and effectively. Choose the SN74ACT3632-30PCBR for unbeatable quality and performance in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material ensures longevity and reliable performance

Surface Mount: YES

Easy to integrate in surface mount assembly processes

Cycle Time: 30 ns

Fast operation speed for efficient data handling

Operating Mode: SYNCHRONOUS

Synchronized operation for accurate data transfer

Nominal Supply Voltage / Vsup (V): 5

Standard voltage requirement for compatibility with various systems

No. of Terminals: 120

Sufficient terminals for versatile connectivity options

Memory Width: 36

Wide memory width for handling large data sets efficiently

Output Enable: YES

Option for enabling/disabling output as needed

Maximum Access Time: 15 ns

Low access time for fast retrieval of data

Technical Specifications

FIFO SN74ACT3632-30PCBR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

15 ns

Additional Features:

MAILBOX

Cycle Time:

30 ns

JESD-30 Code:

S-PQFP-G120

Length:

14 mm

Memory Density:

18432 bit

Memory Width:

36

No. of Functions:

1

No. of Terminals:

120

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X36

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.4 mm

Terminal Position:

QUAD

Width:

14 mm

Trade Compliance

SN74ACT3632-30PCBR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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