Loading...

SNJ54ALS229AJ

Texas Instruments

SNJ54ALS229AJ by Texas Instruments

SNJ54ALS229AJ by Texas Instruments is a FIFO with 16x5 organization, 80-bit memory density, and 35ns max access time. It operates synchronously at 5V and is ideal for military-grade applications requiring fast data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,058 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,058

-

-

-

-

Digiode

USA . 191 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

191

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 246 parts In-Stock

1+ parts

$4.545

100+ parts

-

1k+ parts

$4.993

10k+ parts

-

246

$4.545

-

$4.993

-

DigiPath Technology Company

USA . 1,635 parts In-Stock

1+ parts

$5.005

100+ parts

$4.604

1k+ parts

-

10k+ parts

-

1,635

$5.005

$4.604

-

-

IDEA Electronic Components Group

UK . 1,971 parts In-Stock

1+ parts

$5.107

100+ parts

-

1k+ parts

$4.596

10k+ parts

-

1,971

$5.107

-

$4.596

-

ChromeModa Solutions

Germany . 1,276 parts In-Stock

1+ parts

$5.107

100+ parts

$4.188

1k+ parts

-

10k+ parts

-

1,276

$5.107

$4.188

-

-

AZTECH Wire

Italy . 745 parts In-Stock

1+ parts

$6.308

100+ parts

-

1k+ parts

-

10k+ parts

-

745

$6.308

-

-

-

One Stop Electronics

USA . 348 parts In-Stock

1+ parts

$29.000

100+ parts

-

1k+ parts

-

10k+ parts

-

348

$29.000

-

-

-

Corphita

USA . 110 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

110

-

-

-

-

Overview

Experience seamless data transfer and storage with the SNJ54ALS229AJ FIFO by Texas Instruments. Crafted with precision using high-quality materials, this synchronous FIFO device offers reliability and efficiency in managing data flow. Ideal for various applications in military-grade environments, this product ensures fast cycle times and low power consumption. Invest in the SNJ54ALS229AJ for a superior performance that meets your data processing needs effortlessly.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material ensures durability and reliability, making the product suitable for harsh environments.

Cycle Time: 40 ns

Fast cycle time allows for efficient data handling and processing.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures accurate and coordinated data transfer.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage for easy integration with existing systems.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, suitable for demanding applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Output Enable: YES

Output enable feature provides flexibility in controlling data output.

Technical Specifications

FIFO SNJ54ALS229AJ attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

35 ns

Additional Features:

FALL-THROUGH TIME 24NS

Cycle Time:

40 ns

JESD-30 Code:

R-CDIP-T20

Length:

24.195 mm

Memory Density:

80 bit

Memory IC Type:

Memory Width:

5

No. of Functions:

1

No. of Terminals:

20

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16X5

Output Enable:

YES

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

5.08 mm

Sub-Category:

FIFOs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

SNJ54ALS229AJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

New products
from Texas Instruments 7

Similar products 19