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SNJ54ABT7819GB

Texas Instruments

SNJ54ABT7819GB by Texas Instruments

SNJ54ABT7819GB by Texas Instruments is a 512x18 BiCMOS FIFO with 20ns cycle time, operating at 5V. It features MIL-PRF-38535 screening level for military-grade applications. With a max clock frequency of 50MHz, it is ideal for high-speed parallel data storage and retrieval systems in harsh environments.

Median Price

$576.980

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 7 parts In-Stock

1+ parts

$477.810

100+ parts

$449.140

1k+ parts

$420.470

10k+ parts

-

7

$477.810

$449.140

$420.470

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DigiKey

USA . 7 parts In-Stock

1+ parts

$576.980

100+ parts

-

1k+ parts

-

10k+ parts

-

7

$576.980

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-

-

Verical

USA . 7 parts In-Stock

1+ parts

$597.263

100+ parts

$561.425

1k+ parts

$525.587

10k+ parts

-

7

$597.263

$561.425

$525.587

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,016 parts In-Stock

1+ parts

$527.050

100+ parts

-

1k+ parts

-

10k+ parts

-

2,016

$527.050

-

-

-

Vyrian

USA . 8,511 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,511

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-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,166 parts In-Stock

1+ parts

$4.323

100+ parts

-

1k+ parts

$4.744

10k+ parts

-

1,166

$4.323

-

$4.744

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ChromeModa Solutions

Germany . 6,554 parts In-Stock

1+ parts

$4.857

100+ parts

$3.983

1k+ parts

-

10k+ parts

-

6,554

$4.857

$3.983

-

-

IDEA Electronic Components Group

UK . 516 parts In-Stock

1+ parts

$4.857

100+ parts

-

1k+ parts

$4.371

10k+ parts

-

516

$4.857

-

$4.371

-

Microchip USA

USA . 350 parts In-Stock

1+ parts

$386.630

100+ parts

$372.570

1k+ parts

$365.540

10k+ parts

$369.380

350

$386.630

$372.570

$365.540

$369.380

Ampacity Inc.

Singapore . 7 parts In-Stock

1+ parts

$471.570

100+ parts

-

1k+ parts

-

10k+ parts

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7

$471.570

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-

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Corphita

USA . 4,481 parts In-Stock

1+ parts

$499.311

100+ parts

-

1k+ parts

-

10k+ parts

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4,481

$499.311

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-

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DigiPath Technology Company

USA . 2,084 parts In-Stock

1+ parts

-

100+ parts

$4.379

1k+ parts

-

10k+ parts

-

2,084

-

$4.379

-

-

Overview

Elevate your electronics with the SNJ54ABT7819GB by Texas Instruments, a top-of-the-line BI-DIRECTIONAL FIFO memory IC. Crafted with precision using advanced BICMOS technology, this military-grade component offers unparalleled reliability and performance. Whether you're working on aerospace, defense, or industrial applications, this FIFO chip guarantees seamless data transfer at a lightning-fast 50 MHz clock frequency. Trust Texas Instruments for quality, trust SNJ54ABT7819GB for superior results. Elevate your projects today!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The Cermaic, Metal-Sealed Cofired package body material ensures durability and reliability, making this product a good choice for applications that require robust components.

Cycle Time: 20 ns

With a fast cycle time of 20ns, this FIFO product offers quick data transfer speeds, making it suitable for high-performance applications.

Package Shape: SQUARE

The square package shape allows for efficient use of space and easy integration into circuit designs, making this FIFO product convenient to work with.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures precise timing and coordination of data transfers, making this FIFO product reliable for synchronous data processing applications.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with standard power supplies, making this FIFO product easy to integrate into existing systems.

No. of Terminals: 84

With 84 terminals, this FIFO product offers versatile connectivity options, enabling it to interface with various other components and devices.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C allows this FIFO product to withstand harsh environmental conditions, making it suitable for demanding applications.

Memory IC Type: BI-DIRECTIONAL FIFO

The bi-directional FIFO memory IC type enables efficient data storage and retrieval in both directions, enhancing the versatility and functionality of this product.

Technical Specifications

FIFO SNJ54ABT7819GB attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

12 ns

Maximum Clock Frequency (fCLK):

50 MHz

Cycle Time:

20 ns

JESD-30 Code:

S-CPGA-P84

Length:

29.464 mm

Memory Density:

9216 bit

Memory IC Type:

Memory Width:

18

No. of Functions:

1

No. of Terminals:

84

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X18

Output Enable:

NO

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

PGA

Package Equivalence Code:

PGA84M,11X11

Package Shape:

Package Style (Meter):

GRID ARRAY

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

5.21 mm

Sub-Category:

FIFOs

Maximum Supply Current:

95 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BICMOS

Temperature Grade:

Terminal Form:

PIN/PEG

Terminal Pitch:

2.54 mm

Terminal Position:

PERPENDICULAR

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

29.464 mm

Trade Compliance

SNJ54ABT7819GB Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-01-445-9587, 5962014459587

NIIN

014459587

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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