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SN74ACT7204-50N

Texas Instruments

SN74ACT7204-50N by Texas Instruments

SN74ACT7204-50N by Texas Instruments is a 4Kx9 FIFO with 36864-bit memory density and 15 MHz clock frequency. It operates asynchronously at 5V, ideal for commercial applications requiring fast data access within a temperature range of 0 to 70°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,639 parts In-Stock

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3,639

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Digiode

USA . 3,031 parts In-Stock

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3,031

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Distributors (Availability)

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One Stop Electronics

USA . 1,040 parts In-Stock

1+ parts

$1.000

100+ parts

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1,040

$1.000

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Parana Technologies

USA . 1,980 parts In-Stock

1+ parts

$5.033

100+ parts

-

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$5.592

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1,980

$5.033

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$5.592

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DigiPath Technology Company

USA . 1,391 parts In-Stock

1+ parts

$5.542

100+ parts

$5.099

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1,391

$5.542

$5.099

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ChromeModa Solutions

Germany . 1,899 parts In-Stock

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$5.655

100+ parts

$4.637

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1,899

$5.655

$4.637

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IDEA Electronic Components Group

UK . 1,244 parts In-Stock

1+ parts

$5.655

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$5.090

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1,244

$5.655

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$5.090

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AZTECH Wire

Italy . 488 parts In-Stock

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$12.225

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488

$12.225

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Corphita

USA . 588 parts In-Stock

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Overview

Boost your system's performance with the SN74ACT7204-50N FIFO by Texas Instruments, a top-quality product designed to streamline data transfers. As a leader in semiconductor manufacturing, Texas Instruments offers unmatched reliability and innovation. Ideal for a wide range of applications, this FIFO device ensures smooth communication between components, reducing latency and enhancing overall efficiency. Experience the value and benefits of this cutting-edge technology, improving your system's speed and responsiveness like never before. Trust Texas Instruments to deliver superior performance for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection to the internal components of the FIFO, making it suitable for various environments.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent operation of the FIFO, offering flexibility and efficiency in data storage and retrieval.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V ensures reliable and consistent performance of the FIFO, making it compatible with standard power sources.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70°C ensures the FIFO can withstand elevated temperatures and operate effectively in challenging conditions.

Technology: CMOS

The use of CMOS technology in the FIFO results in low power consumption, high speed operation, and compatibility with a wide range of electronic devices.

Technical Specifications

FIFO SN74ACT7204-50N attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

50 ns

Maximum Clock Frequency (fCLK):

15 MHz

JESD-30 Code:

R-PDIP-T28

Memory Density:

36864 bit

Memory IC Type:

Memory Width:

9

No. of Terminals:

28

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX9

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.01 Amp

Sub-Category:

FIFOs

Maximum Supply Current:

95 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN74ACT7204-50N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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