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SMJ416100-80HKBM

Texas Instruments

SMJ416100-80HKBM by Texas Instruments

SMJ416100-80HKBM by Texas Instruments is a 16MX1 FAST PAGE DRAM with 16777216-bit memory density. It operates at 5V, has an access time of 80ns, and supports separate I/O. Ideal for military-grade applications requiring fast data access in a compact FLATPACK package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,653 parts In-Stock

1+ parts

-

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9,653

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Digiode

USA . 4,253 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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4,253

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 989 parts In-Stock

1+ parts

$4.174

100+ parts

-

1k+ parts

$4.617

10k+ parts

-

989

$4.174

-

$4.617

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DigiPath Technology Company

USA . 332 parts In-Stock

1+ parts

$4.596

100+ parts

$4.229

1k+ parts

-

10k+ parts

-

332

$4.596

$4.229

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IDEA Electronic Components Group

UK . 2,363 parts In-Stock

1+ parts

$4.690

100+ parts

-

1k+ parts

$4.221

10k+ parts

-

2,363

$4.690

-

$4.221

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ChromeModa Solutions

Germany . 1,746 parts In-Stock

1+ parts

$4.690

100+ parts

$3.846

1k+ parts

-

10k+ parts

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1,746

$4.690

$3.846

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AZTECH Wire

Italy . 783 parts In-Stock

1+ parts

$11.538

100+ parts

-

1k+ parts

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10k+ parts

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783

$11.538

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One Stop Electronics

USA . 1,300 parts In-Stock

1+ parts

$29.000

100+ parts

-

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10k+ parts

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1,300

$29.000

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Corphita

USA . 1,228 parts In-Stock

1+ parts

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1,228

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Overview

Experience unmatched performance and reliability with the SMJ416100-80HKBM by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch quality and innovation in every product. This DRAM module is perfect for applications requiring fast access times and high memory density. With a wide operating temperature range and military-grade durability, this component offers exceptional value and benefits to customers looking for a reliable solution. Upgrade your system with the SMJ416100-80HKBM and enjoy seamless performance like never before.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This high-quality and durable material ensures reliability and longevity of the product.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for high-speed and efficient data processing.

Nominal Supply Voltage / Vsup (V): 5

Operates efficiently at a standard voltage level, making it compatible with various systems.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, ensuring stability and performance in challenging environments.

Memory IC Type: FAST PAGE DRAM

Fast page access mode improves data retrieval speed, making it ideal for applications requiring quick access to large amounts of data.

Technical Specifications

DRAM SMJ416100-80HKBM attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

80 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

Input/Output Type:

SEPARATE

JESD-30 Code:

R-CDFP-F28

Length:

19.655 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

28

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16MX1

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DFP

Package Equivalence Code:

FL28,.5

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

3.32 mm

Self Refresh:

NO

Maximum Standby Current:

.001 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

70 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

11.43 mm

Trade Compliance

SMJ416100-80HKBM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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