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SMJ416100-10HKB

Texas Instruments

SMJ416100-10HKB by Texas Instruments

SMJ416100-10HKB by Texas Instruments is a 16MX1 FAST PAGE DRAM with 16777216 bit memory density. It operates at 5V, has a max access time of 100ns, and supports 3-STATE output characteristics. Ideal for military applications requiring fast page access in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,318 parts In-Stock

1+ parts

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4,318

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Vyrian

USA . 3,195 parts In-Stock

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3,195

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,024 parts In-Stock

1+ parts

$3.245

100+ parts

-

1k+ parts

$3.766

10k+ parts

-

2,024

$3.245

-

$3.766

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DigiPath Technology Company

USA . 1,543 parts In-Stock

1+ parts

$3.573

100+ parts

$3.287

1k+ parts

-

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1,543

$3.573

$3.287

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ChromeModa Solutions

Germany . 3,322 parts In-Stock

1+ parts

$3.646

100+ parts

$2.990

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-

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3,322

$3.646

$2.990

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IDEA Electronic Components Group

UK . 858 parts In-Stock

1+ parts

$3.646

100+ parts

-

1k+ parts

$3.281

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858

$3.646

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$3.281

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AZTECH Wire

Italy . 433 parts In-Stock

1+ parts

$13.770

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433

$13.770

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One Stop Electronics

USA . 1,412 parts In-Stock

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$26.000

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1,412

$26.000

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Corphita

USA . 4,366 parts In-Stock

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4,366

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Overview

Unlock the power of cutting-edge technology with the SMJ416100-10HKB from Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers unparalleled quality and performance. This DRAM module offers fast page access mode, 3-state output characteristics, and a high memory density of 16M words. Ideal for military-grade applications, this product provides reliable operation in extreme temperatures ranging from -55°C to 125°C. Experience seamless integration and exceptional value with the SMJ416100-10HKB, designed to meet the demands of your most critical projects.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired materials ensures durability and reliability in various operating conditions.

Surface Mount: YES

Allows for easy and efficient installation on PCBs, saving space and simplifying the manufacturing process.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard voltage of 5V, making it compatible with a wide range of systems and applications.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, suitable for use in industrial and military applications where extreme conditions may be present.

Memory Density: 16777216 bit

Provides a large memory density, allowing for storage of a vast amount of data in a single package.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed performance, making it energy-efficient and fast.

Technical Specifications

DRAM SMJ416100-10HKB attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

100 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

JESD-30 Code:

R-CDFP-F28

Length:

19.655 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

28

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16MX1

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DFP

Package Shape:

Package Style (Meter):

FLATPACK

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

3.32 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

11.43 mm

Trade Compliance

SMJ416100-10HKB Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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