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SMJ416100-80FNC

Texas Instruments

SMJ416100-80FNC by Texas Instruments

SMJ416100-80FNC by Texas Instruments is a 16MX1 FAST PAGE DRAM with 16777216 bit memory density. It operates in ASYNCHRONOUS mode with 80 ns max access time, suitable for MILITARY applications. The package style is SMALL OUTLINE, featuring 24 terminals and a temperature range of -55 to 125 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,282 parts In-Stock

1+ parts

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7,282

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Digiode

USA . 3,498 parts In-Stock

1+ parts

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3,498

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,216 parts In-Stock

1+ parts

$3.612

100+ parts

-

1k+ parts

$4.127

10k+ parts

-

1,216

$3.612

-

$4.127

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DigiPath Technology Company

USA . 1,838 parts In-Stock

1+ parts

$3.977

100+ parts

$3.659

1k+ parts

-

10k+ parts

-

1,838

$3.977

$3.659

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ChromeModa Solutions

Germany . 6,765 parts In-Stock

1+ parts

$4.058

100+ parts

$3.328

1k+ parts

-

10k+ parts

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6,765

$4.058

$3.328

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IDEA Electronic Components Group

UK . 1,536 parts In-Stock

1+ parts

$4.058

100+ parts

-

1k+ parts

$3.652

10k+ parts

-

1,536

$4.058

-

$3.652

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One Stop Electronics

USA . 1,220 parts In-Stock

1+ parts

$10.000

100+ parts

-

1k+ parts

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10k+ parts

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1,220

$10.000

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AZTECH Wire

Italy . 437 parts In-Stock

1+ parts

$17.933

100+ parts

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437

$17.933

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Corphita

USA . 2,256 parts In-Stock

1+ parts

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2,256

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Overview

Upgrade your electronic devices with the high-quality SMJ416100-80FNC by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch DRAM components that are perfect for a variety of applications. From consumer electronics to military-grade equipment, this fast page DRAM offers superior performance and reliability. With a wide operating temperature range and 3-state output characteristics, this product is designed to meet all your memory needs. Trust Texas Instruments to provide the best technology for your projects and experience the benefits of cutting-edge innovation.

Feature Benefit Bullets

Package Body Material: CERAMIC

The ceramic material provides excellent thermal conductivity, helping to dissipate heat efficiently and improve overall product reliability.

Surface Mount: YES

Makes installation easier and more convenient, especially in modern electronic devices where space is limited.

Operating Mode: ASYNCHRONOUS

Allows for flexible and independent operations on different memory locations, enhancing overall performance.

Nominal Supply Voltage (Vsup): 5V

Compatible with standard power supply voltages, making it easy to integrate into existing systems.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, suitable for use in harsh environments or industrial applications.

Technical Specifications

DRAM SMJ416100-80FNC attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

80 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

JESD-30 Code:

R-CDSO-N24

Length:

19.685 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

24

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16MX1

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

SON

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

3.18 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

11.43 mm

Trade Compliance

SMJ416100-80FNC Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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