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SMJ416100-60FNCM

Texas Instruments

SMJ416100-60FNCM by Texas Instruments

SMJ416100-60FNCM by Texas Instruments is a 16MX1 FAST PAGE DRAM with 16777216-bit memory density. Operating at 5V, it offers a max access time of 60ns and refresh cycles of 4096. Ideal for military-grade applications requiring fast asynchronous memory solutions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,639 parts In-Stock

1+ parts

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8,639

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Digiode

USA . 1,737 parts In-Stock

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1,737

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 445 parts In-Stock

1+ parts

$3.766

100+ parts

-

1k+ parts

$4.261

10k+ parts

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445

$3.766

-

$4.261

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DigiPath Technology Company

USA . 187 parts In-Stock

1+ parts

$4.147

100+ parts

$3.816

1k+ parts

-

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187

$4.147

$3.816

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ChromeModa Solutions

Germany . 4,525 parts In-Stock

1+ parts

$4.232

100+ parts

$3.470

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4,525

$4.232

$3.470

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IDEA Electronic Components Group

UK . 2,032 parts In-Stock

1+ parts

$4.232

100+ parts

-

1k+ parts

$3.809

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2,032

$4.232

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$3.809

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One Stop Electronics

USA . 1,020 parts In-Stock

1+ parts

$9.000

100+ parts

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1,020

$9.000

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AZTECH Wire

Italy . 880 parts In-Stock

1+ parts

$12.360

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880

$12.360

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Corphita

USA . 3,892 parts In-Stock

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3,892

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Overview

Upgrade your system with the SMJ416100-60FNCM by Texas Instruments, a top-tier manufacturer known for quality and reliability. This fast page DRAM offers unmatched performance in a compact package, making it ideal for military-grade applications where speed and efficiency are essential. With a high memory density of 16M words and fast access time of 60 ns, this asynchronous DRAM ensures seamless operation even in extreme temperatures. Trust Texas Instruments to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired materials ensures durability and reliability in various operating conditions.

Surface Mount: YES

Being surface mountable makes installation easier and more efficient, saving time and effort during assembly.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible data access and processing, offering versatility in various applications.

Nominal Supply Voltage (Vsup): 5V

Operating at a standard supply voltage of 5V makes it compatible with a wide range of systems and power sources.

Organization: 16MX1

The 16MX1 organization provides high memory density, allowing for efficient storage and retrieval of data.

Temperature Grade: MILITARY

Designed to operate in military-grade temperatures, ensuring reliability and performance in harsh environments.

Technology: CMOS

Utilizing CMOS technology offers low power consumption, reducing energy costs and heat generation.

Memory IC Type: FAST PAGE DRAM

Fast Page DRAM technology enables quick access to memory, improving overall system performance and responsiveness.

Technical Specifications

DRAM SMJ416100-60FNCM attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

60 ns

Additional Features:

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

JESD-30 Code:

R-CDSO-N24

Length:

19.685 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

24

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16MX1

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

SON

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

3.18 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

11.43 mm

Trade Compliance

SMJ416100-60FNCM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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