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SMJ416100-70HKB

Texas Instruments

SMJ416100-70HKB by Texas Instruments

SMJ416100-70HKB by Texas Instruments is a 16MX1 FAST PAGE DRAM with 16777216-bit memory density. It operates in ASYNCHRONOUS mode with 70ns max access time, suitable for MILITARY applications. The package is RECTANGULAR FLATPACK made of CERAMIC and METAL-SEALED COFIRED, supporting surface mount installation.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,100 parts In-Stock

1+ parts

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5,100

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Digiode

USA . 4,837 parts In-Stock

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4,837

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 623 parts In-Stock

1+ parts

$3.318

100+ parts

-

1k+ parts

$3.841

10k+ parts

-

623

$3.318

-

$3.841

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ChromeModa Solutions

Germany . 6,240 parts In-Stock

1+ parts

$3.728

100+ parts

$3.057

1k+ parts

-

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6,240

$3.728

$3.057

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IDEA Electronic Components Group

UK . 856 parts In-Stock

1+ parts

$3.728

100+ parts

-

1k+ parts

$3.355

10k+ parts

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856

$3.728

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$3.355

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One Stop Electronics

USA . 748 parts In-Stock

1+ parts

$9.000

100+ parts

-

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748

$9.000

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AZTECH Wire

Italy . 821 parts In-Stock

1+ parts

$12.632

100+ parts

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821

$12.632

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Corphita

USA . 3,709 parts In-Stock

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3,709

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DigiPath Technology Company

USA . 658 parts In-Stock

1+ parts

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100+ parts

$3.361

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658

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$3.361

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Overview

Unleash the power of high-quality memory solutions with Texas Instruments' SMJ416100-70HKB, a top-of-the-line FAST PAGE DRAM. Designed for military-grade applications, this product offers unmatched reliability and performance. With a memory density of 16M words and maximum access time of 70 ns, it provides lightning-fast data retrieval for critical operations. Trust in Texas Instruments to deliver cutting-edge technology that exceeds expectations and elevates your systems to new heights of efficiency and productivity. Choose excellence, choose Texas Instruments.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material combination ensures durability and reliability, making the product suitable for harsh operating conditions.

Surface Mount: YES

Surface mount technology simplifies PCB assembly process and saves space, making it a convenient choice for compact electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and efficient data access, making it suitable for a wide range of applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard supply voltage of 5V ensures compatibility with various systems and ease of integration.

Temperature Grade: MILITARY

Designed for military-grade applications, the product offers enhanced reliability, durability, and performance under extreme conditions.

Memory IC Type: FAST PAGE DRAM

Fast page DRAM technology enables rapid data access and transfer speeds, making it ideal for high-performance computing tasks.

Technical Specifications

DRAM SMJ416100-70HKB attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

70 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

JESD-30 Code:

R-CDFP-F28

Length:

19.655 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

28

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16MX1

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DFP

Package Shape:

Package Style (Meter):

FLATPACK

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

3.32 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

11.43 mm

Trade Compliance

SMJ416100-70HKB Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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