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SMJ416100-70FNCM

Texas Instruments

SMJ416100-70FNCM by Texas Instruments

The Texas Instruments SMJ416100-70FNCM is a 16MX1 FAST PAGE DRAM with 70 ns access time, operating at 5V. It features separate I/O, 3-STATE output, and asynchronous mode. Ideal for military-grade applications requiring high memory density and fast data access in a small outline package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,029 parts In-Stock

1+ parts

-

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6,029

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Digiode

USA . 2,283 parts In-Stock

1+ parts

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2,283

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,501 parts In-Stock

1+ parts

$4.111

100+ parts

-

1k+ parts

$4.567

10k+ parts

-

1,501

$4.111

-

$4.567

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DigiPath Technology Company

USA . 2,347 parts In-Stock

1+ parts

$4.527

100+ parts

$4.164

1k+ parts

-

10k+ parts

-

2,347

$4.527

$4.164

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ChromeModa Solutions

Germany . 2,636 parts In-Stock

1+ parts

$4.619

100+ parts

$3.788

1k+ parts

-

10k+ parts

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2,636

$4.619

$3.788

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IDEA Electronic Components Group

UK . 2,327 parts In-Stock

1+ parts

$4.619

100+ parts

-

1k+ parts

$4.157

10k+ parts

-

2,327

$4.619

-

$4.157

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AZTECH Wire

Italy . 553 parts In-Stock

1+ parts

$9.395

100+ parts

-

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553

$9.395

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One Stop Electronics

USA . 751 parts In-Stock

1+ parts

$13.000

100+ parts

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751

$13.000

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Corphita

USA . 3,894 parts In-Stock

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3,894

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Overview

Elevate your system performance with the SMJ416100-70FNCM by Texas Instruments. Crafted with precision and expertise, this DRAM module offers unparalleled quality and reliability. Ideal for a wide range of applications, this product boasts fast access times and low standby currents, ensuring optimal efficiency. Upgrade your technology with the innovative features and superior capabilities of the SMJ416100-70FNCM, providing unmatched value and benefits to customers looking for top-notch memory solutions. Trust Texas Instruments for cutting-edge technology that delivers exceptional results.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired materials ensures durability and reliability in various operating conditions, making it a good choice for long-term usage.

Surface Mount: YES

Allows for easy installation and replacement on printed circuit boards, improving overall manufacturing efficiency.

Operating Mode: ASYNCHRONOUS

Enables independent operation without the need for synchronization signals, offering flexibility in data transfer processes.

Nominal Supply Voltage / Vsup (V): 5

Compatible with standard power supply voltages, ensuring seamless integration with other components in the system.

Memory Density: 16777216 bit

Offers high memory density, allowing for storage of large amounts of data in a compact form factor.

Maximum Access Time: 70 ns

Provides fast access speeds, reducing latency and improving overall system performance.

Technical Specifications

DRAM SMJ416100-70FNCM attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

70 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

Input/Output Type:

SEPARATE

JESD-30 Code:

R-CDSO-N24

Length:

19.685 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

24

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16MX1

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

SON

Package Equivalence Code:

SOLCC24/28,.45

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

3.18 mm

Self Refresh:

NO

Maximum Standby Current:

.001 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

80 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

11.43 mm

Trade Compliance

SMJ416100-70FNCM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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