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SMJ416160-80HKD

Texas Instruments

SMJ416160-80HKD by Texas Instruments

The Texas Instruments SMJ416160-80HKD is a 1MX16 FAST PAGE DRAM with 80ns access time, operating at 5V. It features a memory density of 16777216 bits and refresh cycles of 4096, suitable for military-grade applications requiring high-speed data processing in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,479 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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8,479

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-

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Digiode

USA . 691 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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691

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 929 parts In-Stock

1+ parts

$2.944

100+ parts

-

1k+ parts

$3.444

10k+ parts

-

929

$2.944

-

$3.444

-

DigiPath Technology Company

USA . 2,345 parts In-Stock

1+ parts

$3.242

100+ parts

$2.982

1k+ parts

-

10k+ parts

-

2,345

$3.242

$2.982

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ChromeModa Solutions

Germany . 4,981 parts In-Stock

1+ parts

$3.308

100+ parts

$2.713

1k+ parts

-

10k+ parts

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4,981

$3.308

$2.713

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IDEA Electronic Components Group

UK . 1,269 parts In-Stock

1+ parts

$3.308

100+ parts

-

1k+ parts

$2.977

10k+ parts

-

1,269

$3.308

-

$2.977

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One Stop Electronics

USA . 284 parts In-Stock

1+ parts

$6.000

100+ parts

-

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10k+ parts

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284

$6.000

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AZTECH Wire

Italy . 706 parts In-Stock

1+ parts

$13.797

100+ parts

-

1k+ parts

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10k+ parts

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706

$13.797

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Corphita

USA . 1,699 parts In-Stock

1+ parts

-

100+ parts

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1,699

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Overview

Elevate your electronics with the SMJ416160-80HKD by Texas Instruments, a top-tier manufacturer known for superior quality and cutting-edge technology. This military-grade DRAM offers lightning-fast performance and a wide range of applications, making it a versatile choice for any project. With a memory density of 16,777,216 bits and a maximum access time of 80 ns, this memory IC is perfect for demanding tasks that require speed and reliability. Upgrade your devices today with the SMJ416160-80HKD and experience the power of Texas Instruments innovation.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides durability and good thermal properties, making the product suitable for rugged environments.

Surface Mount: YES

Allows for easy installation and integration with circuit boards, reducing assembly time.

Operating Mode: ASYNCHRONOUS

Enables flexible operation and communication with other components in the system.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage ensures compatibility with most systems and power sources.

Organization: 1MX16

Provides a high memory capacity with a 1 megabit organization organized in a 16-bit wide format.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation, enhancing overall performance.

Maximum Access Time: 80 ns

Fast access time ensures quick data retrieval and processing, ideal for high-performance applications.

Technical Specifications

DRAM SMJ416160-80HKD attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

80 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

JESD-30 Code:

R-CDFP-F50

Length:

21 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

50

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

1MX16

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DFP

Package Shape:

Package Style (Meter):

FLATPACK

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

3.55 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

16.5 mm

Trade Compliance

SMJ416160-80HKD Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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