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SMJ4161-15JDS

Texas Instruments

SMJ4161-15JDS by Texas Instruments

SMJ4161-15JDS by Texas Instruments is a 64KX1 DRAM with 65536 bit memory density. Operating at 5V, it offers a max access time of 150ns and refresh cycles of 256. Ideal for video applications due to its NMOS technology and asynchronous operation mode.

Median Price

$56.430

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,823 parts In-Stock

1+ parts

-

100+ parts

$50.160

1k+ parts

$44.880

10k+ parts

$42.240

1,823

-

$50.160

$44.880

$42.240

DigiKey

USA . 1,823 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,823

-

-

-

-

Verical

USA . 1,770 parts In-Stock

1+ parts

-

100+ parts

$62.700

1k+ parts

$56.100

10k+ parts

$52.800

1,770

-

$62.700

$56.100

$52.800

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,840 parts In-Stock

1+ parts

$52.953

100+ parts

-

1k+ parts

-

10k+ parts

-

4,840

$52.953

-

-

-

Vyrian

USA . 4,965 parts In-Stock

1+ parts

$55.740

100+ parts

-

1k+ parts

-

10k+ parts

-

4,965

$55.740

-

-

-

Standard Data Resources

USA . 19 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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19

-

-

-

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PAR Electronics

UK . 2 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 139 parts In-Stock

1+ parts

$4.808

100+ parts

-

1k+ parts

$5.319

10k+ parts

-

139

$4.808

-

$5.319

-

DigiPath Technology Company

USA . 407 parts In-Stock

1+ parts

$5.294

100+ parts

$4.870

1k+ parts

-

10k+ parts

-

407

$5.294

$4.870

-

-

ChromeModa Solutions

Germany . 5,565 parts In-Stock

1+ parts

$5.402

100+ parts

$4.430

1k+ parts

-

10k+ parts

-

5,565

$5.402

$4.430

-

-

IDEA Electronic Components Group

UK . 1,301 parts In-Stock

1+ parts

$5.402

100+ parts

-

1k+ parts

$4.862

10k+ parts

-

1,301

$5.402

-

$4.862

-

Corphita

USA . 1,812 parts In-Stock

1+ parts

$50.166

100+ parts

-

1k+ parts

-

10k+ parts

-

1,812

$50.166

-

-

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A-Z Elektronik GmbH

Germany . 5,634 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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5,634

-

-

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Overview

Elevate your technology with the SMJ4161-15JDS by Texas Instruments, a high-quality DRAM that offers unparalleled performance and reliability. Designed by the reputable manufacturer, Texas Instruments, this product is versatile for a wide range of applications. With its advanced features and cutting-edge technology, this DRAM provides customers with exceptional value, benefits, and advantages. Upgrade your system today with the SMJ4161-15JDS and experience superior performance like never before.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material ensures durability and reliability, making this product suitable for rugged environments.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent control of each memory location, providing flexibility and efficiency in data access.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V is standard, making it compatible with a wide range of systems and applications.

Organization: 64KX1

The organization of 64KX1 offers a high memory density and efficient storage capacity for data-intensive tasks.

Output Characteristics: 3-STATE

The 3-STATE output characteristics allow for multiple devices to share the same bus, enhancing system versatility and integration.

Technology: NMOS

The NMOS technology provides fast and efficient memory access, making this product suitable for demanding applications that require high-speed performance.

Memory IC Type: VIDEO DRAM

Being a Video DRAM, this product is optimized for video processing tasks and can deliver high-quality graphics performance.

Technical Specifications

DRAM SMJ4161-15JDS attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

PAGE

Maximum Access Time:

150 ns

Additional Features:

RAS ONLY REFRESH; 256 X 1 SAM PORT

JESD-30 Code:

R-CDIP-T20

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

20

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

64KX1

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Refresh Cycles:

256

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

4.45 mm

Maximum Standby Current:

.025 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

NMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

SMJ4161-15JDS Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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