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SMJ416100-80FNCM

Texas Instruments

SMJ416100-80FNCM by Texas Instruments

SMJ416100-80FNCM by Texas Instruments is a 16MX1 FAST PAGE DRAM with 16777216 bit memory density. It operates at 5V, has a max access time of 80ns, and supports separate I/O type. Ideal for military-grade applications requiring fast data access in small outline packages.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,209 parts In-Stock

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8,209

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Digiode

USA . 1,631 parts In-Stock

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1,631

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,650 parts In-Stock

1+ parts

$4.417

100+ parts

-

1k+ parts

$4.840

10k+ parts

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1,650

$4.417

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$4.840

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DigiPath Technology Company

USA . 1,807 parts In-Stock

1+ parts

$4.864

100+ parts

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1,807

$4.864

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ChromeModa Solutions

Germany . 4,070 parts In-Stock

1+ parts

$4.963

100+ parts

$4.070

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4,070

$4.963

$4.070

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IDEA Electronic Components Group

UK . 452 parts In-Stock

1+ parts

$4.963

100+ parts

-

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$4.467

10k+ parts

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452

$4.963

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$4.467

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AZTECH Wire

Italy . 257 parts In-Stock

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$15.274

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257

$15.274

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One Stop Electronics

USA . 338 parts In-Stock

1+ parts

$18.000

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338

$18.000

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Corphita

USA . 247 parts In-Stock

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Overview

Unlock unparalleled performance and reliability with the SMJ416100-80FNCM by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments guarantees top-notch quality and cutting-edge technology in every product. This DRAM module offers seamless integration into various applications thanks to its versatile design and advanced features like separate input/output type and fast page access mode. Elevate your projects with the unmatched value, benefits, and advantages that this high-quality memory IC brings to the table. Trust Texas Instruments for superior performance and innovation that sets you apart from the competition.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired package body material ensures durability and reliability of the product.

Surface Mount: YES

Allows for easy and efficient mounting on circuit boards, saving space and simplifying the manufacturing process.

Operating Mode: ASYNCHRONOUS

Enables independent operation without the need for synchronization, providing flexibility in usage.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V ensures compatibility with various systems and devices.

No. of Terminals: 24

Sufficient terminals for connectivity and communication within the device, facilitating smooth data transfer.

Temperature Grade: MILITARY

Designed to operate effectively under extreme temperature conditions, suitable for military and rugged applications.

Technology: CMOS

Utilizing CMOS technology offers low power consumption and high speed performance, enhancing overall efficiency.

Memory IC Type: FAST PAGE DRAM

Fast page dynamic random access memory provides quick access to stored data, improving system performance.

Technical Specifications

DRAM SMJ416100-80FNCM attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

80 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

Input/Output Type:

SEPARATE

JESD-30 Code:

R-CDSO-N24

Length:

19.685 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

24

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16MX1

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

SON

Package Equivalence Code:

SOLCC24/28,.45

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

3.18 mm

Self Refresh:

NO

Maximum Standby Current:

.001 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

70 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

11.43 mm

Trade Compliance

SMJ416100-80FNCM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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