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SMJ416100-60HKBM

Texas Instruments

SMJ416100-60HKBM by Texas Instruments

SMJ416100-60HKBM by Texas Instruments is a 16MX1 FAST PAGE DRAM with 16777216 bit memory density. Operating at 5V, it offers fast access time of 60ns and refresh cycles of 4096. Ideal for military-grade applications requiring high-speed data storage in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,357 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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6,357

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Digiode

USA . 3,136 parts In-Stock

1+ parts

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1k+ parts

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3,136

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,751 parts In-Stock

1+ parts

$4.247

100+ parts

-

1k+ parts

$4.681

10k+ parts

-

1,751

$4.247

-

$4.681

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DigiPath Technology Company

USA . 38 parts In-Stock

1+ parts

$4.677

100+ parts

-

1k+ parts

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10k+ parts

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38

$4.677

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-

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ChromeModa Solutions

Germany . 5,667 parts In-Stock

1+ parts

$4.772

100+ parts

$3.913

1k+ parts

-

10k+ parts

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5,667

$4.772

$3.913

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IDEA Electronic Components Group

UK . 1,218 parts In-Stock

1+ parts

$4.772

100+ parts

-

1k+ parts

$4.295

10k+ parts

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1,218

$4.772

-

$4.295

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AZTECH Wire

Italy . 415 parts In-Stock

1+ parts

$7.086

100+ parts

-

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415

$7.086

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One Stop Electronics

USA . 556 parts In-Stock

1+ parts

$24.000

100+ parts

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556

$24.000

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Corphita

USA . 4,508 parts In-Stock

1+ parts

-

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4,508

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Overview

Unleash the power of cutting-edge technology with the SMJ416100-60HKBM by Texas Instruments. With a focus on quality and innovation, Texas Instruments delivers top-of-the-line DRAM products that exceed expectations. Perfect for military-grade applications, this FAST PAGE DRAM offers lightning-fast access times and maximum supply voltage of 5.5V, ensuring superior performance in even the most demanding environments. Experience unparalleled reliability and efficiency with Texas Instruments - where excellence meets affordability.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material choice ensures durability and reliability for the product, making it suitable for industrial and military applications.

Surface Mount: YES

Ease of installation and space-saving design for efficient PCB layouts.

Operating Mode: ASYNCHRONOUS

Allows for independent operation of memory cells, enhancing speed and performance of the product.

Nominal Supply Voltage / Vsup (V): 5

Stable and commonly used supply voltage for compatibility with various systems.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, ideal for harsh environmental conditions and extended operation.

Organization: 16MX1

Efficient organization providing high memory capacity in a compact form factor.

Technology: CMOS

Low power consumption and high speed operation for energy-efficient performance.

Memory IC Type: FAST PAGE DRAM

Fast page access for quick retrieval of data, improving overall system responsiveness.

Technical Specifications

DRAM SMJ416100-60HKBM attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

60 ns

Additional Features:

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

JESD-30 Code:

R-CDFP-F28

Length:

19.685 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

28

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16MX1

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DFP

Package Shape:

Package Style (Meter):

FLATPACK

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

3.32 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

11.43 mm

Trade Compliance

SMJ416100-60HKBM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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