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SMJ416100-80HKB

Texas Instruments

SMJ416100-80HKB by Texas Instruments

SMJ416100-80HKB by Texas Instruments is a 16Mx1 FAST PAGE DRAM with 80ns access time, operating at 5V. It features 3-STATE output and asynchronous mode, suitable for military-grade applications requiring high memory density and fast refresh cycles.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,598 parts In-Stock

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7,598

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Digiode

USA . 4,419 parts In-Stock

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4,419

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 624 parts In-Stock

1+ parts

$4.557

100+ parts

-

1k+ parts

$5.005

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624

$4.557

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$5.005

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DigiPath Technology Company

USA . 1,193 parts In-Stock

1+ parts

$5.018

100+ parts

$4.616

1k+ parts

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1,193

$5.018

$4.616

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ChromeModa Solutions

Germany . 4,430 parts In-Stock

1+ parts

$5.120

100+ parts

$4.198

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4,430

$5.120

$4.198

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IDEA Electronic Components Group

UK . 175 parts In-Stock

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$5.120

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$4.608

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175

$5.120

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$4.608

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One Stop Electronics

USA . 1,491 parts In-Stock

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$9.000

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1,491

$9.000

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AZTECH Wire

Italy . 395 parts In-Stock

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$16.149

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395

$16.149

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Corphita

USA . 1,627 parts In-Stock

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1,627

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Overview

Enhance your electronic designs with the Texas Instruments SMJ416100-80HKB, a top-quality DRAM chip crafted with precision and innovation. Utilizing ceramic and metal-sealed cofired materials, this DRAM chip is perfect for various applications, offering fast page access mode and 3-state output characteristics. With a military-grade temperature rating and a maximum access time of just 80ns, this chip provides unmatched performance and reliability. Upgrade your projects today with the cutting-edge technology and superior craftsmanship of Texas Instruments' SMJ416100-80HKB.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This package body material ensures durability and reliability for the product, making it suitable for demanding environments.

Surface Mount: YES

Being surface mountable makes it easier for integration into electronic devices, saving space and simplifying the assembly process.

Operating Mode: ASYNCHRONOUS

The asynchronous operation allows for flexible timing and control, enhancing the versatility of the product in various applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage level of 5V ensures compatibility with a wide range of systems and power sources.

Organization: 16MX1

This organization provides a large memory capacity of 16 megabits, suitable for storing a high volume of data efficiently.

Temperature Grade: MILITARY

Designed to meet military-grade temperature requirements, ensuring reliability and performance in extreme operating conditions.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation, contributing to energy efficiency and performance of the product.

Memory Density: 16777216 bit

With a high memory density of 16,777,216 bits, this product can accommodate large amounts of data for high-performance computing tasks.

Maximum Access Time: 80 ns

The fast maximum access time of 80 nanoseconds ensures quick data retrieval and processing, enhancing overall system performance.

Technical Specifications

DRAM SMJ416100-80HKB attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

80 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

JESD-30 Code:

R-CDFP-F28

Length:

19.655 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

28

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16MX1

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DFP

Package Shape:

Package Style (Meter):

FLATPACK

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

3.32 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

11.43 mm

Trade Compliance

SMJ416100-80HKB Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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