Loading...

SMJ416100-70HKBM

Texas Instruments

SMJ416100-70HKBM by Texas Instruments

SMJ416100-70HKBM by Texas Instruments is a 16MX1 FAST PAGE DRAM with 16777216-bit memory density. It operates at 5V, has a max access time of 70ns, and supports asynchronous mode. Ideal for military-grade applications requiring high-speed data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,681 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,681

-

-

-

-

Digiode

USA . 1,601 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,601

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 837 parts In-Stock

1+ parts

$5.258

100+ parts

-

1k+ parts

$5.881

10k+ parts

-

837

$5.258

-

$5.881

-

DigiPath Technology Company

USA . 1,510 parts In-Stock

1+ parts

$5.790

100+ parts

$5.327

1k+ parts

-

10k+ parts

-

1,510

$5.790

$5.327

-

-

ChromeModa Solutions

Germany . 3,649 parts In-Stock

1+ parts

$5.908

100+ parts

$4.845

1k+ parts

-

10k+ parts

-

3,649

$5.908

$4.845

-

-

IDEA Electronic Components Group

UK . 1,659 parts In-Stock

1+ parts

$5.908

100+ parts

-

1k+ parts

$5.317

10k+ parts

-

1,659

$5.908

-

$5.317

-

AZTECH Wire

Italy . 858 parts In-Stock

1+ parts

$16.396

100+ parts

-

1k+ parts

-

10k+ parts

-

858

$16.396

-

-

-

One Stop Electronics

USA . 523 parts In-Stock

1+ parts

$26.000

100+ parts

-

1k+ parts

-

10k+ parts

-

523

$26.000

-

-

-

Corphita

USA . 2,013 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,013

-

-

-

-

Overview

Discover the cutting-edge technology of the Texas Instruments SMJ416100-70HKBM, a high-quality DRAM that guarantees top-notch performance and reliability. With a military-grade temperature grade and fast page access mode, this memory IC offers seamless operation in a wide range of applications. From aerospace to telecommunications, this versatile component provides 16M words of memory density, ensuring optimal efficiency and speed. Trust Texas Instruments to deliver superior products like the SMJ416100-70HKBM that exceed expectations and bring unmatched value to your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material ensures durability and reliability in demanding environments, making the product suitable for use in a wide range of applications.

Nominal Supply Voltage / Vsup (V): 5

The consistent supply voltage of 5V ensures stable performance and compatibility with various systems.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and efficient data access, enhancing overall system performance.

Memory IC Type: FAST PAGE DRAM

The fast page design of the DRAM enables quick access to data, improving response times and overall system efficiency.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand heat and operate reliably in challenging conditions.

Technical Specifications

DRAM SMJ416100-70HKBM attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

70 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

Input/Output Type:

SEPARATE

JESD-30 Code:

R-CDFP-F28

Length:

19.655 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

28

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16MX1

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DFP

Package Equivalence Code:

FL28,.5

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

3.32 mm

Self Refresh:

NO

Maximum Standby Current:

.001 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

80 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

11.43 mm

Trade Compliance

SMJ416100-70HKBM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

New products
from Texas Instruments 7

Similar products 19