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SM320VC5416HFGW10

Texas Instruments

SM320VC5416HFGW10 by Texas Instruments

Texas Instruments SM320VC5416HFGW10 is a 16-bit DSP with 131072 RAM words, operating at 20 MHz. Ideal for digital signal processing applications, it features a max supply voltage of 1.65V and operates in low power mode. With a package style of flatpack and guard ring, this CMOS technology-based processor has an address bus width of 23 bits.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 2,494 parts In-Stock

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Digiode

USA . 721 parts In-Stock

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AZTECH Wire

Italy . 553 parts In-Stock

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$13.732

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One Stop Electronics

USA . 788 parts In-Stock

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$23.000

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Corohmni

South Africa . 3,190 parts In-Stock

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Parana Technologies

USA . 1,901 parts In-Stock

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DigiPath Technology Company

USA . 1,594 parts In-Stock

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$79.270

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$72.929

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IDEA Electronic Components Group

UK . 1,786 parts In-Stock

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$80.888

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$76.844

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$72.799

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ChromeModa Solutions

Germany . 1,102 parts In-Stock

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$66.328

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QUARKTWIN TECHNOLOGY LTD

USA . 17,304 parts In-Stock

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Corphita

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Microchip USA

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Overview

Unleash the power of cutting-edge technology with the Texas Instruments SM320VC5416HFGW10 Digital Signal Processor! Crafted with precision and expertise by a renowned manufacturer, this DSP offers unparalleled performance and reliability for a wide range of applications. Whether you're in the automotive industry, telecommunications, or consumer electronics, this product provides exceptional value, efficiency, and innovation. Elevate your projects to new heights with the Texas Instruments SM320VC5416HFGW10 and experience the difference that quality engineering can make.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides excellent thermal conductivity and reliability, making the product suitable for demanding industrial applications.

Maximum Supply Voltage: 1.65 V

A lower maximum supply voltage helps in power efficiency and extends the battery life of portable devices.

Address Bus Width: 23

A wider address bus allows for more memory addressing capabilities, enabling the processor to handle larger datasets efficiently.

Screening Level: 38535Q/M;38534H;883B

The high screening level ensures reliability and performance consistency in harsh environments or critical applications.

Bit Size: 16

The 16-bit architecture allows for efficient processing of data and instructions, making the product suitable for real-time signal processing tasks.

Power Supplies (V): 1.5,3.3

Support for multiple power supply options gives flexibility in design and compatibility with various power sources.

RAM Words: 131072

The large RAM capacity enables storage of extensive data for processing, enhancing the product's performance in handling complex signal processing tasks.

Maximum Clock Frequency: 20 MHz

A high maximum clock frequency allows for rapid data processing and response times, making the device suitable for time-sensitive applications.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with various digital systems, making the product energy-efficient and versatile.

Technical Specifications

Digital Signal Processors (DSPs) SM320VC5416HFGW10 attributes and parameters. Explore more Digital Signal Processors (DSPs) devices from Texas Instruments

Specs

Additional Features:

ALSO REQUIRES 3.3V SUPPLY

Address Bus Width:

23

Barrel Shifter:

YES

Bit Size:

16

Boundary Scan:

YES

Maximum Clock Frequency:

20 MHz

External Data Bus Width:

16

Format:

FIXED POINT

Internal Bus Architecture:

MULTIPLE

JESD-30 Code:

S-CQFP-F164

Length:

28.705 mm

Low Power Mode:

YES

No. of Terminals:

164

Maximum Operating Temperature:

115 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

TPAK164,2.5SQ,25

Package Shape:

Package Style (Meter):

FLATPACK, GUARD RING

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

1.5,3.3

Qualification:

Not Qualified

RAM Words:

131072

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

3.3 mm

Sub-Category:

Digital Signal Processors

Maximum Supply Voltage:

1.65 V

Minimum Supply Voltage:

1.45 V

Nominal Supply Voltage:

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.635 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

28.705 mm

Peripheral IC Type:

Trade Compliance

SM320VC5416HFGW10 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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