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SM320C30HFGM50

Texas Instruments

SM320C30HFGM50 by Texas Instruments

Texas Instruments SM320C30HFGM50 is a 32-bit DSP with 2048 RAM words, operating at 50 MHz. Ideal for military applications due to its ceramic-metal package and wide temperature range (-55 to 125 °C). Features include a 24-bit address bus, low power mode, and barrel shifter for efficient signal processing.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,721 parts In-Stock

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4,721

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Digiode

USA . 78 parts In-Stock

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78

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Distributors (Availability)

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One Stop Electronics

USA . 1,437 parts In-Stock

1+ parts

$12.000

100+ parts

-

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1,437

$12.000

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AZTECH Wire

Italy . 512 parts In-Stock

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$15.228

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512

$15.228

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Parana Technologies

USA . 2,282 parts In-Stock

1+ parts

$26.392

100+ parts

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$26.983

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2,282

$26.392

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$26.983

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IDEA Electronic Components Group

UK . 374 parts In-Stock

1+ parts

$29.654

100+ parts

$28.171

1k+ parts

$26.689

10k+ parts

-

374

$29.654

$28.171

$26.689

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ChromeModa Solutions

Germany . 126 parts In-Stock

1+ parts

$29.654

100+ parts

$24.316

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126

$29.654

$24.316

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Corohmni

South Africa . 599 parts In-Stock

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$56.422

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599

$56.422

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Corphita

USA . 4,826 parts In-Stock

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4,826

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DigiPath Technology Company

USA . 795 parts In-Stock

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$26.736

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795

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$26.736

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Overview

Unleash the power of cutting-edge technology with the SM320C30HFGM50 by Texas Instruments. This high-quality digital signal processor offers unparalleled performance and reliability, making it ideal for a wide range of applications. From communications to industrial automation, this product delivers exceptional value, efficiency, and precision. Trust in Texas Instruments to provide you with the tools you need to elevate your projects to new heights. Experience the difference with the SM320C30HFGM50 today.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material ensures durability and reliability, making the product suitable for rugged environments.

Maximum Supply Voltage: 5.25 V

Higher supply voltage allows for better performance and flexibility in power supply options.

Bit Size: 32

With a 32-bit architecture, the product can handle complex signal processing tasks efficiently.

Maximum Clock Frequency: 50 MHz

High clock frequency enables faster processing speeds, essential for real-time signal processing applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable.

Technical Specifications

Digital Signal Processors (DSPs) SM320C30HFGM50 attributes and parameters. Explore more Digital Signal Processors (DSPs) devices from Texas Instruments

Specs

Address Bus Width:

24

Barrel Shifter:

YES

Bit Size:

32

Boundary Scan:

NO

Maximum Clock Frequency:

50 MHz

External Data Bus Width:

32

Format:

FLOATING POINT

Internal Bus Architecture:

MULTIPLE

JESD-30 Code:

S-CQFP-F196

Length:

34.29 mm

Low Power Mode:

YES

No. of Terminals:

196

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

TPAK196,2.5SQ,25

Package Shape:

Package Style (Meter):

FLATPACK, GUARD RING

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

RAM Words:

2048

Maximum Seated Height:

3.3 mm

Sub-Category:

Digital Signal Processors

Maximum Supply Current:

600 mA

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.635 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

34.29 mm

Peripheral IC Type:

Trade Compliance

SM320C30HFGM50 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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