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DRA785BSGABFQ1

Texas Instruments

DRA785BSGABFQ1 by Texas Instruments

The Texas Instruments DRA785BSGABFQ1 is a MICROPROCESSOR CIRCUIT with 32-bit External Data Bus Width and 32 MHz Max Clock Frequency. Designed for automotive applications, it operates b/w -40 to 125 °C with a supply voltage range of 1.02V to 1.11V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,096 parts In-Stock

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4,096

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Digiode

USA . 3,109 parts In-Stock

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3,109

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Distributors (Availability)

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AZTECH Wire

Italy . 326 parts In-Stock

1+ parts

$11.336

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326

$11.336

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One Stop Electronics

USA . 783 parts In-Stock

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$23.000

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783

$23.000

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Native Components

USA . 28 parts In-Stock

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$25.980

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28

$25.980

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Northwest PG Solutions

USA . 1,209 parts In-Stock

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$28.579

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$25.721

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1,209

$28.579

$25.721

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Corohmni

South Africa . 45 parts In-Stock

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$35.590

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45

$35.590

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Parana Technologies

USA . 34 parts In-Stock

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$72.101

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34

$72.101

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ChromeModa Solutions

Germany . 3,206 parts In-Stock

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$81.012

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$66.430

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3,206

$81.012

$66.430

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IDEA Electronic Components Group

UK . 2,012 parts In-Stock

1+ parts

$81.012

100+ parts

$76.961

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$72.911

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2,012

$81.012

$76.961

$72.911

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Microchip USA

USA . 4,110 parts In-Stock

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Corphita

USA . 1,925 parts In-Stock

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1,925

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DigiPath Technology Company

USA . 152 parts In-Stock

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$73.040

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152

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$73.040

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Overview

Elevate your automotive electronics with the DRA785BSGABFQ1 by Texas Instruments, a cutting-edge MICROPROCESSOR CIRCUIT designed to exceed expectations. With a focus on quality and reliability, Texas Instruments delivers a product that offers unmatched value and performance in the industry. This advanced peripheral IC is perfect for a wide range of applications, providing customers with the advantage of enhanced functionality and seamless integration. Trust Texas Instruments to deliver excellence in every aspect of your automotive electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good durability and protection for the internal components of the IC, making it suitable for various applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient soldering onto PCBs, saving space and enabling high-density designs.

Maximum Supply Voltage: 1.11 V

The high maximum supply voltage allows for flexibility in power supply options and compatibility with different systems.

Package Shape: SQUARE

Square package shape helps in efficient placement on the PCB and ensures optimal use of space.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliability and performance even in harsh environmental conditions.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

Being a microprocessor circuit, this IC offers advanced processing capabilities, making it suitable for complex applications.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with a wide range of devices, enhancing the overall performance of the IC.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs DRA785BSGABFQ1 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

Bus Compatibility:

I2C(2), SPI(4), UART(3),

Maximum Clock Frequency:

32 MHz

External Data Bus Width:

32

JESD-30 Code:

S-PBGA-B367

JESD-609 Code:

e1

Length:

15 mm

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

367

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA167,22X22,26

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Peak Reflow Temperature (C):

250

Screening Level:

AEC-Q100

Maximum Seated Height:

2.82 mm

Maximum Supply Voltage:

1.11 V

Minimum Supply Voltage:

1.02 V

Nominal Supply Voltage:

1.06 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

15 mm

Peripheral IC Type:

Trade Compliance

DRA785BSGABFQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.1

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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