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CP3BT23G18AWMX/NOPB

Texas Instruments

CP3BT23G18AWMX/NOPB by Texas Instruments

CP3BT23G18AWMX/NOPB by Texas Instruments is a 16-bit microprocessor with ROM of 262144 words and RAM of 32768 bytes. It operates at temperatures ranging from -40 to 85°C, making it suitable for industrial applications requiring low power consumption. With a max supply voltage of 2.75V and peak reflow temperature of 260°C, this CPU family CR16C processor is ideal for embedded systems needing high performance in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,915 parts In-Stock

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Digiode

USA . 2,587 parts In-Stock

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Anansix

USA . 1,850 parts In-Stock

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1,850

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Northwest PG Solutions

USA . 1,114 parts In-Stock

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$2.731

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One Stop Electronics

USA . 221 parts In-Stock

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$6.000

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AZTECH Wire

Italy . 506 parts In-Stock

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$19.377

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Parana Technologies

USA . 41 parts In-Stock

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$48.301

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DigiPath Technology Company

USA . 380 parts In-Stock

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$53.186

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$48.931

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380

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ChromeModa Solutions

Germany . 4,912 parts In-Stock

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$54.271

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$44.502

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IDEA Electronic Components Group

UK . 1,530 parts In-Stock

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$54.271

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$51.557

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$48.844

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Corphita

USA . 2,071 parts In-Stock

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Native Components

USA . 943 parts In-Stock

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Microchip USA

USA . 359 parts In-Stock

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Overview

Discover the power of the CP3BT23G18AWMX/NOPB by Texas Instruments, a cutting-edge microprocessor designed to elevate your projects to new heights. With Texas Instruments' reputation for quality and innovation backing it up, this chip offers unparalleled performance in a variety of applications. From industrial automation to consumer electronics, this microprocessor delivers reliable operation and efficient processing power. Experience the value and benefits of this product firsthand and unlock the potential for your next project with the CP3BT23G18AWMX/NOPB.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material is lightweight, durable, and cost-effective, making this microprocessor suitable for a variety of applications.

Surface Mount: YES

Surface mount technology allows for efficient and compact PCB assembly, saving space and reducing overall system size.

Maximum Supply Voltage: 2.75 V

With a maximum supply voltage of 2.75 V, this microprocessor can operate efficiently within a specified voltage range, ensuring stability and performance.

Bit Size: 16

A 16-bit architecture provides a good balance between performance and cost, making this microprocessor suitable for a wide range of embedded applications.

Power Supplies (V): 2.5, 2.5/3.3

Support for multiple power supply voltages (2.5V and 3.3V) offers flexibility in system design and compatibility with various power sources.

RAM Bytes: 32768

With 32768 bytes of RAM, this microprocessor can handle complex computational tasks and store temporary data efficiently, enhancing overall performance.

ROM Programmability: FLASH

Flash ROM programmability provides the ability to easily update firmware or software, adding flexibility and future-proofing capabilities to the microprocessor.

Technical Specifications

Microprocessors CP3BT23G18AWMX/NOPB attributes and parameters. Explore more Microprocessors devices from Texas Instruments

Specs

Address Bus Width:

0

Bit Size:

16

Boundary Scan:

YES

CPU Family:

CR16C

External Data Bus Width:

0

Format:

FIXED POINT

Integrated Cache:

NO

JESD-30 Code:

R-PQFP-G128

Length:

20 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

128

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP128,.63X.87,20

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5,2.5/3.3

Qualification:

Not Qualified

RAM Bytes:

32768

ROM Words:

262144

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

24 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

20 mA

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Peripheral IC Type:

Trade Compliance

CP3BT23G18AWMX/NOPB Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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