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AM5K2E02SABD

Texas Instruments

AM5K2E02SABD by Texas Instruments

AM5K2E02SABD by Texas Instruments is a Microprocessor with 64-bit External Data Bus, 16-bit Address Bus, and Integrated Cache. It operates b/w 0-85°C and has low power mode for energy efficiency. Ideal for applications requiring high-speed processing in compact devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,357 parts In-Stock

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Vyrian

USA . 2,186 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 905 parts In-Stock

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$0.367

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$0.352

905

$0.367

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$0.352

Northwest PG Solutions

USA . 1,156 parts In-Stock

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$0.404

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$0.356

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AZTECH Wire

Italy . 848 parts In-Stock

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$6.363

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$6.363

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One Stop Electronics

USA . 1,319 parts In-Stock

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$11.000

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Parana Technologies

USA . 849 parts In-Stock

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$38.317

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849

$38.317

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DigiPath Technology Company

USA . 434 parts In-Stock

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$42.192

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$42.192

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ChromeModa Solutions

Germany . 3,997 parts In-Stock

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$43.053

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$35.303

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IDEA Electronic Components Group

UK . 2,122 parts In-Stock

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$43.053

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$40.900

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$38.748

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$38.748

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Corphita

USA . 4,905 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the AM5K2E02SABD microprocessor by Texas Instruments. Designed with precision and quality in mind, this processor offers unmatched performance and reliability for a wide range of applications. Whether you're looking to enhance your computing experience, boost productivity, or streamline operations, this innovative product delivers exceptional value and benefits. Trust Texas Instruments to provide you with the tools you need to stay ahead in today's fast-paced world. Elevate your projects with the AM5K2E02SABD and experience the difference that quality engineering can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the microprocessor, ensuring a longer lifespan.

Integrated Cache: YES

Having integrated cache allows for faster processing speeds and improved overall performance.

Surface Mount: YES

Being surface mountable makes installation easier and more convenient in various electronic devices.

Maximum Supply Voltage: 0.997 V

Operating at a maximum supply voltage of 0.997 V helps in reducing power consumption and heat generation.

Address Bus Width: 16

A wider address bus allows for more data to be processed simultaneously, leading to improved efficiency.

Package Shape: SQUARE

The square shape of the package provides a compact form factor, making it suitable for smaller devices.

No. of Terminals: 1089

Having a high number of terminals allows for more connectivity options and flexibility in circuit designs.

Package Style (Meter): GRID ARRAY, FINE PITCH

The grid array with fine pitch design enables high density packaging and efficient heat dissipation.

Minimum Supply Voltage: 0.902 V

Operating at a minimum supply voltage of 0.902 V helps in reducing power consumption and extending battery life.

Maximum Operating Temperature: 85 °C

Capable of operating at a maximum temperature of 85°C ensures reliability under varying environmental conditions.

Minimum Operating Temperature: 0 °C

With a minimum operating temperature of 0°C, the microprocessor can function in colder environments without issues.

Terminal Position: BOTTOM

Bottom terminal position allows for easier PCB layout and better thermal management.

Maximum Seated Height: 3.55 mm

The low maximum seated height provides compatibility with slim electronic devices and helps in reducing overall device thickness.

Width: 27 mm

With a width of 27 mm, the microprocessor can fit into a wide range of devices without occupying too much space.

Boundary Scan: YES

Boundary scan capability allows for easier debugging, testing, and programming of the microprocessor.

External Data Bus Width: 64

A wider external data bus width of 64 helps in faster data transfer rates and improved system performance.

Length: 27 mm

With a length of 27 mm, the microprocessor maintains a compact form factor for versatile integration into different devices.

Peripheral IC Type: MICROPROCESSOR, RISC

Being a RISC-based microprocessor, it offers high performance with simplified instruction set architecture for efficient processing.

Technology: CMOS

CMOS technology ensures low power consumption, high speed, and reliable operation for energy-efficient devices.

Terminal Form: BALL

Ball terminal form provides a reliable connection and easier soldering during assembly.

Nominal Supply Voltage: 0.95 V

Operating at a nominal supply voltage of 0.95 V balances performance and power efficiency for optimized operation.

Terminal Pitch: 0.8 mm

A terminal pitch of 0.8 mm allows for closer terminal spacing, increasing connectivity options and circuit density.

Format: FLOATING POINT

Supporting floating-point format enhances numerical accuracy and processing capabilities for complex calculations.

Speed: 1000 rpm

With a speed of 1000 rpm, the microprocessor offers fast computation and data processing for seamless user experience.

Low Power Mode: YES

Having a low power mode option enables energy conservation and prolongs battery life in portable devices.

Technical Specifications

Microprocessors AM5K2E02SABD attributes and parameters. Explore more Microprocessors devices from Texas Instruments

Specs

Address Bus Width:

16

Boundary Scan:

YES

External Data Bus Width:

64

Format:

FLOATING POINT

Integrated Cache:

YES

JESD-30 Code:

S-PBGA-B1089

Length:

27 mm

Low Power Mode:

YES

No. of Terminals:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Maximum Seated Height:

3.55 mm

Speed:

1000 rpm

Maximum Supply Voltage:

.997 V

Minimum Supply Voltage:

.902 V

Nominal Supply Voltage:

.95 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

27 mm

Peripheral IC Type:

Trade Compliance

AM5K2E02SABD Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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