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SMMUN2211LT3G

Onsemi

SMMUN2211LT3G by Onsemi

SMMUN2211LT3G by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.1A, and DC current gain of 35. This surface-mount device comes in a small outline package with 3 terminals, making it ideal for compact electronic designs.

Median Price

$0.081

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 63,026 parts In-Stock

1+ parts

$0.220

100+ parts

$0.076

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$0.048

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$0.036

63,026

$0.220

$0.076

$0.048

$0.036

Arrow

USA . 40,000 parts In-Stock

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EBV Elektronik

Germany . 20,000 parts In-Stock

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Verical

USA . 10,000 parts In-Stock

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$0.098

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$0.098

Chip1Stop

Japan . 9,900 parts In-Stock

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-

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$0.064

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$0.033

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$0.023

9,900

-

$0.064

$0.033

$0.023

Rochester

USA . 5,480 parts In-Stock

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$0.030

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$0.025

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$0.023

5,480

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$0.023

Distributors (In-Stock)

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Digiode

USA . 963 parts In-Stock

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$0.024

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$0.024

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Nova Conductors

Japan . 69 parts In-Stock

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$0.065

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69

$0.065

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Bristol Electronics

USA . 22,336 parts In-Stock

1+ parts

$0.095

100+ parts

$0.048

1k+ parts

$0.019

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$0.012

22,336

$0.095

$0.048

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$0.012

Flip Electronics

USA . 200,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 70,000 parts In-Stock

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ComSIT USA

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Chip Stock

USA . 61,000 parts In-Stock

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Vyrian

USA . 49,524 parts In-Stock

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Sensible Micro Corp

USA . 44,274 parts In-Stock

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NAC Semi

USA . 30,000 parts In-Stock

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$0.094

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Dan-Mar Components

USA . 22,336 parts In-Stock

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22,336

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Cyclops Electronics Ltd

UK . 10,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 5,583 parts In-Stock

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IBS Electronics

USA . 5,000 parts In-Stock

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$0.043

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$0.043

Distributors (Availability)

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Ampacity Inc.

Singapore . 49,833 parts In-Stock

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$0.019

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Semicontronic

India . 49,575 parts In-Stock

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$0.019

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Corohmni

South Africa . 216 parts In-Stock

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Corphita

USA . 2,034 parts In-Stock

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Argo Parts USA

USA . 3,066 parts In-Stock

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$0.063

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Continental Prestige Electronics

USA . 1,866 parts In-Stock

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Aztec Data Supply Inc.

USA . 300 parts In-Stock

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$1.628

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Perfect Parts

USA . 2,732,599 parts In-Stock

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Infinite Electronics LLP (Excess)

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Lixinc

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Authorized Procurement Solutions

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Eastek

USA . 10,000 parts In-Stock

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iodParts Technologies Inc.

India . 8,410 parts In-Stock

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Problanco Electronics

Mexico . 7,470 parts In-Stock

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TANS Electronics

Latvia . 6,293 parts In-Stock

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SupplyDigital Components

Austria . 6,220 parts In-Stock

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Kulean Microsystems

USA . 2,210 parts In-Stock

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UHIMA Technologies

Türkiye . 217 parts In-Stock

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Overview

Discover the power of the SMMUN2211LT3G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) designed for switching applications. With a compact rectangular package and gull wing terminals, this NPN transistor offers a single configuration with a built-in resistor for easy installation. Experience the reliability and efficiency of Onsemi's cutting-edge technology, providing customers with a maximum collector-emitter voltage of 50V and a minimum DC current gain of 35. Trust in Onsemi to deliver superior performance and value with the SMMUN2211LT3G, perfect for a wide range of electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile for various applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing reliable performance in on/off control circuits.

Surface Mount: YES

Surface mount compatibility makes installation and assembly easier and more efficient.

Maximum Power Dissipation (Abs): 0.4 W

With a high power dissipation rating, this transistor can handle moderate power levels without overheating.

Package Shape: RECTANGULAR

Rectangular shape is space-efficient and allows for easy placement on the PCB.

No. of Terminals: 3

Simple 3-terminal design for easy integration into circuits.

Minimum DC Current Gain (hFE): 35

A high minimum DC current gain ensures consistent and reliable performance in amplification circuits.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to moderate voltage applications, providing protection against voltage spikes.

Transistor Element Material: SILICON

Silicon is a common and reliable semiconductor material known for its stability and efficiency in transistors.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels, making it suitable for a wide range of circuit applications.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good solderability and electrical conductivity, ensuring reliable connections.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit design and layout.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 automotive quality standard ensures high reliability and performance in automotive applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMMUN2211LT3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SMMUN2211LT3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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