Loading...

SMMUN2113LT1

Onsemi

SMMUN2113LT1 by Onsemi

SMMUN2113LT1 by Onsemi is a PNP BJT with built-in resistor for switching applications. It has a hFE of 80, Vce of 50V, and Ic of 0.1A. This surface mount transistor comes in a small outline package with Gull Wing terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

A2Z Electronics, Inc.

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,000

-

-

-

-

Vyrian

USA . 1,821 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,821

-

-

-

-

Digiode

USA . 998 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

998

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TANS Electronics

Latvia . 6,012 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,012

-

-

-

-

Kulean Microsystems

USA . 5,029 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,029

-

-

-

-

Problanco Electronics

Mexico . 4,171 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,171

-

-

-

-

SupplyDigital Components

Austria . 2,810 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,810

-

-

-

-

Corphita

USA . 1,562 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,562

-

-

-

-

UHIMA Technologies

Türkiye . 733 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

733

-

-

-

-

Corohmni

South Africa . 345 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

345

-

-

-

-

Overview

Unleash the power of the SMMUN2113LT1 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) that's perfect for switching applications. With its PNP polarity, built-in resistor, and high DC current gain of 80, this transistor offers unmatched performance and reliability. Its compact package shape and surface mount design make it easy to integrate into your projects. Trust Onsemi's reputation for excellence and choose the SMMUN2113LT1 for all your electronic needs. Elevate your designs with this versatile component today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, ideal for applications where weight and impact resistance are important.

Polarity or Channel Type: PNP

The PNP polarity allows for current flow from emitter to collector, enabling the transistor to easily switch on and off in electronic circuits.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making it a convenient choice for compact electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast and efficient performance when turning circuits on and off.

Surface Mount: YES

The surface-mount capability allows for easy and efficient PCB assembly, saving time and effort during the manufacturing process.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a standardized form factor that can be easily integrated into a wide range of electronic devices and circuit layouts.

Terminal Form: GULL WING

The gull-wing terminal form offers a secure and reliable connection to the PCB, ensuring stable performance in various operating conditions.

No. of Terminals: 3

With three terminals, this transistor provides the necessary connections for proper operation and control within a circuit.

Package Style (Meter): SMALL OUTLINE

The small-outline package style saves space on the PCB and allows for compact designs, making it suitable for applications with limited board real estate.

Minimum DC Current Gain (hFE): 80

The high DC current gain ensures efficient amplification and signal processing, making this transistor an effective component in electronic circuits.

Maximum Collector-Emitter Voltage: 50 V

The 50V maximum collector-emitter voltage rating provides a wide operating range for various voltage levels, enhancing the versatility of this transistor.

Transistor Element Material: SILICON

The silicon material of the transistor element offers excellent performance characteristics, such as high temperature tolerance and low leakage current, ensuring reliable operation.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current loads, suitable for a wide range of circuit applications.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides a reliable connection to the PCB and ensures long-term solder joint integrity, offering a durable component for electronic devices.

Terminal Position: DUAL

The dual terminal position allows for versatile placement and orientation on the PCB, accommodating different circuit layouts and design requirements.

Maximum Time At Peak Reflow Temperature (s): 30

The 30-second maximum time at peak reflow temperature ensures proper solder reflow during assembly, contributing to the reliability and durability of the transistor.

Peak Reflow Temperature °C: 235

The high peak reflow temperature of 235 °C ensures proper soldering and bonding of the transistor to the PCB, offering a secure and stable connection.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMMUN2113LT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SMMUN2113LT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19