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SMMUN2134LT1G

Onsemi

SMMUN2134LT1G by Onsemi

SMMUN2134LT1G by Onsemi is a PNP BJT transistor with max power dissipation of 0.4W, min hFE of 80, and max IC of 0.1A. Ideal for surface mount applications in electronics due to its silicon material and matte tin finish, making it suitable for low-power circuit designs.

Median Price

$0.170

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 5,763 parts In-Stock

1+ parts

$0.170

100+ parts

$0.063

1k+ parts

$0.040

10k+ parts

$0.028

5,763

$0.170

$0.063

$0.040

$0.028

Mouser Electronics

USA . 232 parts In-Stock

1+ parts

$0.180

100+ parts

$0.076

1k+ parts

$0.042

10k+ parts

$0.036

232

$0.180

$0.076

$0.042

$0.036

EBV Elektronik

Germany . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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6,000

-

-

-

-

Flip Electronics (Authorized)

USA . 4,550 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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4,550

-

-

-

-

Rochester

USA . 1,750 parts In-Stock

1+ parts

-

100+ parts

$0.022

1k+ parts

$0.018

10k+ parts

$0.017

1,750

-

$0.022

$0.018

$0.017

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 937 parts In-Stock

1+ parts

$0.024

100+ parts

-

1k+ parts

-

10k+ parts

-

937

$0.024

-

-

-

Vyrian

USA . 370 parts In-Stock

1+ parts

$0.025

100+ parts

-

1k+ parts

-

10k+ parts

-

370

$0.025

-

-

-

NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.084

6,000

-

-

-

$0.084

Bristol Electronics

USA . 5,650 parts In-Stock

1+ parts

-

100+ parts

$0.095

1k+ parts

$0.048

10k+ parts

$0.019

5,650

-

$0.095

$0.048

$0.019

Dan-Mar Components

USA . 5,650 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,650

-

-

-

-

Flip Electronics

USA . 4,550 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,550

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,000

-

-

-

-

ComSIT Distribution GmbH

Germany . 3,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 715 parts In-Stock

1+ parts

$0.022

100+ parts

-

1k+ parts

-

10k+ parts

-

715

$0.022

-

-

-

Corohmni

South Africa . 419 parts In-Stock

1+ parts

$0.025

100+ parts

-

1k+ parts

-

10k+ parts

-

419

$0.025

-

-

-

Component Stockers USA

USA . 425,363 parts In-Stock

1+ parts

$0.030

100+ parts

$0.030

1k+ parts

$0.030

10k+ parts

$0.030

425,363

$0.030

$0.030

$0.030

$0.030

Eastek

USA . 597,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

597,000

-

-

-

-

TANS Electronics

Latvia . 7,252 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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7,252

-

-

-

-

Problanco Electronics

Mexico . 5,959 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,959

-

-

-

-

SupplyDigital Components

Austria . 5,906 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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5,906

-

-

-

-

GreenTree Electronics

Israel . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,000

-

-

-

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Kulean Microsystems

USA . 807 parts In-Stock

1+ parts

-

100+ parts

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807

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UHIMA Technologies

Türkiye . 228 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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228

-

-

-

-

Overview

Unleash the power of innovation with the SMMUN2134LT1G PNP Small Signal Bipolar Junction Transistor by Onsemi. Designed for maximum performance and reliability, this surface-mount transistor offers unparalleled quality and precision engineering. Ideal for a wide range of applications, this transistor provides exceptional value and benefits to customers looking for superior functionality and efficiency in their electronic devices. Upgrade your projects with the best in class technology from Onsemi and experience the difference that quality makes.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this product suitable for applications requiring signal amplification.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, saving space and enabling automated assembly processes.

Maximum Power Dissipation (Abs): 0.4 W

With a maximum power dissipation of 0.4 W, this transistor can handle moderate power levels, making it suitable for various low-power applications.

Minimum DC Current Gain (hFE): 80

A high DC current gain of 80 ensures efficient signal amplification and low signal distortion in circuits utilizing this transistor.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and compatibility with modern electronic systems, making this product a reliable choice for many applications.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1 A allows for safe operation within specified limits, making this transistor suitable for low to moderate current applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and corrosion resistance, ensuring reliable electrical connections and long-term performance.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature of 30 seconds prevents overheating during assembly processes, maintaining the integrity of the transistor.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this transistor can withstand high-temperature soldering processes without damage, ensuring robust assembly.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMMUN2134LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

80

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signals

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

SMMUN2134LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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