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SMMUN2211LT1

Onsemi

SMMUN2211LT1 by Onsemi

SMMUN2211LT1 by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a min hFE of 35, max VCE of 50V, and max IC of 0.1A. This surface mount device in plastic/epoxy package is ideal for compact electronic designs requiring high-speed switching capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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Bristol Electronics

USA . 3,000 parts In-Stock

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Dan-Mar Components

USA . 3,000 parts In-Stock

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Digiode

USA . 1,519 parts In-Stock

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Vyrian

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479

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TANS Electronics

Latvia . 5,248 parts In-Stock

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Problanco Electronics

Mexico . 5,043 parts In-Stock

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Kulean Microsystems

USA . 2,257 parts In-Stock

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Corphita

USA . 1,905 parts In-Stock

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SupplyDigital Components

Austria . 1,766 parts In-Stock

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Corohmni

South Africa . 390 parts In-Stock

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UHIMA Technologies

Türkiye . 21 parts In-Stock

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Overview

Discover the SMMUN2211LT1 by Onsemi, a top-of-the-line Small Signal Bipolar Junction Transistor that boasts quality manufacturing and versatile applications in switching. With its NPN polarity and single configuration with built-in resistor, this transistor offers unmatched value and benefits to customers. Perfect for surface mount applications, this rectangular package with gull wing terminals provides reliability and efficiency. Trust Onsemi for superior performance and innovation in semiconductor technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and temperature resistant material ensures reliability in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used and widely compatible for a variety of applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Built-in resistor simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Optimized for switching applications, providing fast response times and efficient performance.

Surface Mount: YES

Designed for easy surface mount installation, suitable for automated assembly processes.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient packaging and placement on the circuit board.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical support and ease of soldering.

Minimum DC Current Gain (hFE): 35

Higher minimum DC current gain ensures stable and consistent performance in amplification.

Maximum Collector-Emitter Voltage: 50 V

A high maximum voltage rating allows for versatile use in various voltage applications.

Transistor Element Material: SILICON

Silicon provides excellent semiconductor properties for reliable and efficient operation.

Maximum Collector Current (IC): 0.1 A

Able to handle up to 0.1A of collector current, suitable for low to medium power applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead finish offers good solderability and ensures secure electrical connections.

Peak Reflow Temperature: 235 °C

Capable of withstanding high peak reflow temperatures, suitable for lead-free soldering processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMMUN2211LT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SMMUN2211LT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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