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SMMUN2214LT1

Onsemi

SMMUN2214LT1 by Onsemi

SMMUN2214LT1 by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a min hFE of 80, max VCE of 50V, and max IC of 0.1A. This surface mount device comes in a small outline package with Gull Wing terminals, ideal for compact electronic designs.

Median Price

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Lifecycle Status

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1k+

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Vyrian

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Digiode

USA . 62 parts In-Stock

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TANS Electronics

Latvia . 6,747 parts In-Stock

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Problanco Electronics

Mexico . 1,896 parts In-Stock

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SupplyDigital Components

Austria . 1,275 parts In-Stock

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Corphita

USA . 590 parts In-Stock

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UHIMA Technologies

Türkiye . 448 parts In-Stock

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Corohmni

South Africa . 279 parts In-Stock

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Kulean Microsystems

USA . 96 parts In-Stock

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Overview

Upgrade your electronics with the SMMUN2214LT1 by Onsemi, a top-tier manufacturer known for superior quality and reliability. This Small Signal Bipolar Junction Transistor (BJT) is perfect for switching applications, offering a single configuration with a built-in resistor. With a maximum collector-emitter voltage of 50V and a minimum DC current gain of 80, this transistor delivers exceptional performance and efficiency. Say goodbye to outdated components and hello to enhanced functionality with the SMMUN2214LT1 from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a sturdy and durable housing for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Ideal for applications where rapid switching between on and off states is required.

Surface Mount: YES

Can be easily mounted on the surface of a PCB, saving time and effort during assembly.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement on the PCB.

Terminal Form: GULL WING

Gull wing terminals provide good mechanical strength and ease of soldering.

No. of Terminals: 3

Simplifies connectivity in the circuit and reduces chances of wiring errors.

Package Style (Meter): SMALL OUTLINE

Compact size makes it suitable for space-constrained applications.

Minimum DC Current Gain (hFE): 80

High current gain ensures reliable amplification of signals.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low-voltage applications while providing a safe operating range.

Transistor Element Material: SILICON

Silicon is known for its reliability and efficiency in transistor manufacturing.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels for various applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead finish provides good solderability and ensures a reliable electrical connection.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit design and layout.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a short duration, making it suitable for reflow soldering processes.

Peak Reflow Temperature °C: 235

Can be subjected to high reflow temperatures without compromising its performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMMUN2214LT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SMMUN2214LT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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