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SMMUN2213LT1

Onsemi

SMMUN2213LT1 by Onsemi

SMMUN2213LT1 by Onsemi is a NPN BJT transistor with a built-in resistor, ideal for switching applications. It has a min DC current gain of 80 and can handle a max collector-emitter voltage of 50V. This surface-mount transistor comes in a small outline package with Gull Wing terminals.

Median Price

$0.069

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.055

10k+ parts

$0.049

6,000

-

$0.066

$0.055

$0.049

DigiKey

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.080

6,000

-

-

-

$0.080

Verical

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.069

6,000

-

-

-

$0.069

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,591 parts In-Stock

1+ parts

$0.051

100+ parts

-

1k+ parts

-

10k+ parts

-

1,591

$0.051

-

-

-

Vyrian

USA . 2,189 parts In-Stock

1+ parts

$0.054

100+ parts

-

1k+ parts

-

10k+ parts

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2,189

$0.054

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 869 parts In-Stock

1+ parts

$0.049

100+ parts

-

1k+ parts

-

10k+ parts

-

869

$0.049

-

-

-

Corohmni

South Africa . 306 parts In-Stock

1+ parts

$0.054

100+ parts

-

1k+ parts

-

10k+ parts

-

306

$0.054

-

-

-

TANS Electronics

Latvia . 8,241 parts In-Stock

1+ parts

-

100+ parts

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8,241

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Kulean Microsystems

USA . 7,644 parts In-Stock

1+ parts

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7,644

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SupplyDigital Components

Austria . 6,060 parts In-Stock

1+ parts

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6,060

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Problanco Electronics

Mexico . 4,560 parts In-Stock

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4,560

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UHIMA Technologies

Türkiye . 789 parts In-Stock

1+ parts

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100+ parts

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789

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Overview

Experience unparalleled quality and performance with the SMMUN2213LT1 by Onsemi. As a leading manufacturer in the industry, Onsemi's Small Signal Bipolar Junction Transistors (BJT) are trusted for their reliability and versatility. This NPN transistor with a built-in resistor is perfect for switching applications, offering customers the value of efficiency and precision in their electronic projects. With a maximum collector-emitter voltage of 50V and a terminal finish of Tin/Lead (Sn/Pb), this transistor is the ideal choice for your next project. Choose Onsemi for superior products that deliver exceptional results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications and environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile for different electronic setups.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making this transistor convenient for compact projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and efficient performance in such scenarios.

Surface Mount: YES

Being surface mount compatible allows for easier PCB assembly and potentially higher density of components on the board.

Package Shape: RECTANGULAR

The rectangular shape provides easy alignment and orientation during installation, enhancing user-friendliness.

Terminal Form: GULL WING

Gull wing terminals offer strong solder joints and good mechanical stability, ensuring reliable connections in the circuit.

No. of Terminals: 3

With three terminals, this transistor can be easily integrated into circuits for versatile functionality.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, ideal for compact electronic devices and applications.

Minimum DC Current Gain (hFE): 80

A high minimum DC current gain ensures consistent and reliable amplification performance in practical circuit applications.

Maximum Collector-Emitter Voltage: 50 V

With a high maximum voltage rating, this transistor can handle a range of voltage levels without risk of damage, increasing its versatility.

Transistor Element Material: SILICON

Silicon is a common and reliable material choice for transistors, offering good performance characteristics and longevity.

Maximum Collector Current (IC): 0.1 A

Capable of handling up to 0.1 ampere of collector current, this transistor is suitable for low to moderate power applications.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides good solderability and conductivity, ensuring stable electrical connections in the circuit.

Terminal Position: DUAL

Dual terminal position allows for more flexibility in circuit layout and connection options, enhancing the versatility of this transistor.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum reflow time of 30 seconds, this transistor can withstand typical solder reflow processes without degradation.

Peak Reflow Temperature °C: 235

Capable of withstanding peak reflow temperatures up to 235 °C, this transistor is suitable for lead-free soldering processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMMUN2213LT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SMMUN2213LT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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