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SMMUN2213LT1G

Onsemi

SMMUN2213LT1G by Onsemi

SMMUN2213LT1G by Onsemi is a NPN BJT transistor with a min hFE of 80 and max VCE of 50V. Ideal for switching applications, it features a built-in resistor, matte tin finish, and AEC-Q101 standard compliance. This surface-mount device has 3 terminals in gull wing shape, making it suitable for compact designs.

Median Price

$0.180

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 45,000 parts In-Stock

1+ parts

$0.070

100+ parts

$0.070

1k+ parts

$0.070

10k+ parts

-

45,000

$0.070

$0.070

$0.070

-

DigiKey

USA . 3,036 parts In-Stock

1+ parts

$0.180

100+ parts

$0.067

1k+ parts

$0.043

10k+ parts

-

3,036

$0.180

$0.067

$0.043

-

Mouser Electronics

USA . 14,451 parts In-Stock

1+ parts

$0.220

100+ parts

$0.076

1k+ parts

$0.048

10k+ parts

$0.042

14,451

$0.220

$0.076

$0.048

$0.042

Avnet

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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3,000

-

-

-

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EBV Elektronik

Germany . 3,000 parts In-Stock

1+ parts

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3,000

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Distributors (In-Stock)

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Nova Conductors

Japan . 450 parts In-Stock

1+ parts

$0.065

100+ parts

-

1k+ parts

-

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450

$0.065

-

-

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Digiode

USA . 611 parts In-Stock

1+ parts

$0.066

100+ parts

-

1k+ parts

-

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611

$0.066

-

-

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Flip Electronics

USA . 109,100 parts In-Stock

1+ parts

-

100+ parts

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109,100

-

-

-

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IBS Electronics

USA . 90,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.022

90,000

-

-

-

$0.022

Vyrian

USA . 22,762 parts In-Stock

1+ parts

-

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22,762

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Chip Stock

USA . 18,000 parts In-Stock

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18,000

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Sensible Micro Corp

USA . 10,234 parts In-Stock

1+ parts

-

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10,234

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-

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NAC Semi

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.090

3,000

-

-

-

$0.090

Cyclops Electronics Ltd

UK . 265 parts In-Stock

1+ parts

-

100+ parts

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265

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 24,341 parts In-Stock

1+ parts

$0.060

100+ parts

-

1k+ parts

-

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24,341

$0.060

-

-

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Corphita

USA . 797 parts In-Stock

1+ parts

$0.063

100+ parts

-

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-

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797

$0.063

-

-

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Corohmni

South Africa . 229 parts In-Stock

1+ parts

$0.064

100+ parts

-

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229

$0.064

-

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Argo Parts USA

USA . 1,505 parts In-Stock

1+ parts

$0.065

100+ parts

-

1k+ parts

-

10k+ parts

$0.063

1,505

$0.065

-

-

$0.063

Continental Prestige Electronics

USA . 735 parts In-Stock

1+ parts

$0.065

100+ parts

-

1k+ parts

-

10k+ parts

$0.064

735

$0.065

-

-

$0.064

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.065

100+ parts

-

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100

$0.065

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Component Stockers USA

USA . 9,410 parts In-Stock

1+ parts

$0.310

100+ parts

$0.090

1k+ parts

$0.060

10k+ parts

-

9,410

$0.310

$0.090

$0.060

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Perfect Parts

USA . 349,128 parts In-Stock

1+ parts

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349,128

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GreenTree Electronics

Israel . 63,000 parts In-Stock

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63,000

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Infinite Electronics LLP (Excess)

. 63,000 parts In-Stock

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63,000

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Eastek

USA . 18,000 parts In-Stock

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18,000

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Lixinc

USA . 10,063 parts In-Stock

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10,063

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Kepictronics

USA . 9,000 parts In-Stock

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9,000

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SupplyDigital Components

Austria . 4,761 parts In-Stock

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4,761

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TANS Electronics

Latvia . 3,566 parts In-Stock

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3,566

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Kulean Microsystems

USA . 2,619 parts In-Stock

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2,619

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Problanco Electronics

Mexico . 2,390 parts In-Stock

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2,390

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UHIMA Technologies

Türkiye . 545 parts In-Stock

1+ parts

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545

-

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Overview

Upgrade your electronics with the SMMUN2213LT1G from Onsemi, a top-of-the-line Small Signal Bipolar Junction Transistor (BJT) that is perfect for switching applications. Manufactured with high-quality materials and featuring a built-in resistor, this NPN transistor offers superior performance and reliability. Its compact design, surface mount capability, and dual terminal position make it easy to integrate into any project. Experience seamless operation and enhanced efficiency with the SMMUN2213LT1G by Onsemi. Elevate your technology game today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design by providing a convenient solution for current limiting.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it reliable and efficient in those scenarios.

Surface Mount: YES

Ideal for automated assembly processes, saving time and costs in production.

Package Shape: RECTANGULAR

The rectangular shape allows for easy placement and alignment on circuit boards.

Terminal Form: GULL WING

Gull wing terminals offer strong mechanical support and are suitable for surface mount applications.

No. of Terminals: 3

Simple and straightforward design with just 3 terminals for easy integration into circuits.

Package Style (Meter): SMALL OUTLINE

Compact and space-saving package style that is efficient for smaller electronic devices.

Minimum DC Current Gain (hFE): 80

High DC current gain ensures stable amplification and reliable performance in various applications.

Maximum Collector-Emitter Voltage: 50 V

Can handle up to 50 volts, providing flexibility in voltage requirements for different circuits.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and efficiency in transistor applications.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current loads effectively.

Terminal Finish: Matte Tin (Sn) - annealed

Matte Tin finish provides good solderability and annealed finish ensures long-term reliability.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit design and connection options.

Reference Standard: AEC-Q101

Compliant with AEC-Q101 automotive standard, ensuring high quality and reliability for automotive applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMMUN2213LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SMMUN2213LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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