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SMMUN2111LT1G

Onsemi

SMMUN2111LT1G by Onsemi

SMMUN2111LT1G by Onsemi is a PNP BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.1A, and power dissipation of 0.4W. This surface mount device comes in a small outline package with gull wing terminals, making it suitable for compact electronic designs.

Median Price

$0.036

Lifecycle Status

Suppliers In-Stock

21

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1k+

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Arrow

USA . 5 parts In-Stock

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$0.029

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Mouser Electronics

USA . 113,157 parts In-Stock

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$0.220

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$0.076

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$0.048

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113,157

$0.220

$0.076

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$0.041

EBV Elektronik

Germany . 90,000 parts In-Stock

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DigiKey

USA . 60,000 parts In-Stock

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Verical

USA . 42,000 parts In-Stock

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Master Electronics

USA . 42,000 parts In-Stock

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Chip1Stop

Japan . 2,510 parts In-Stock

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Element14

Singapore . 1,270 parts In-Stock

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$0.037

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1,270

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Distributors (In-Stock)

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Greenchips

USA . 6,000 parts In-Stock

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$0.034

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$0.032

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$0.030

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$0.028

6,000

$0.034

$0.032

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$0.028

Nova Conductors

Japan . 75 parts In-Stock

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$0.088

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Digiode

USA . 1,299 parts In-Stock

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$0.090

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$0.090

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TME

Poland . 1,520 parts In-Stock

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$0.150

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$0.057

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$0.041

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Vyrian

USA . 95,100 parts In-Stock

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Flip Electronics

USA . 46,317 parts In-Stock

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IBS Electronics

USA . 39,000 parts In-Stock

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Chip Stock

USA . 37,000 parts In-Stock

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NAC Semi

USA . 18,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 8,325 parts In-Stock

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SIE Connect GmbH - GreenChips

Germany . 6,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 6,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 2,489 parts In-Stock

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Semicontronic

India . 19,420 parts In-Stock

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$0.015

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Ampacity Inc.

Singapore . 77,478 parts In-Stock

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$0.016

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Corohmni

South Africa . 487 parts In-Stock

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$0.018

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Corphita

USA . 244 parts In-Stock

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$0.086

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Argo Parts USA

USA . 2,892 parts In-Stock

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2,892

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Netroflash

USA . 2,000 parts In-Stock

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$0.088

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$0.088

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Component Stockers USA

USA . 2,662,778 parts In-Stock

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$0.250

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$0.060

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$0.050

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2,662,778

$0.250

$0.060

$0.050

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Advanced Electronics

New Zealand . 450 parts In-Stock

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$0.829

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$0.788

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$0.788

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450

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Aztec Data Supply Inc.

USA . 4,190 parts In-Stock

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$1.696

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GreenTree Electronics

Israel . 2,583,000 parts In-Stock

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Eastek

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Perfect Parts

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Kepictronics

USA . 72,368 parts In-Stock

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Lixinc

USA . 10,410 parts In-Stock

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Futuretech Components

Singapore . 10,000 parts In-Stock

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Authorized Procurement Solutions

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Kulean Microsystems

USA . 6,978 parts In-Stock

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SupplyDigital Components

Austria . 6,965 parts In-Stock

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TANS Electronics

Latvia . 3,757 parts In-Stock

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Continental Prestige Electronics

USA . 3,690 parts In-Stock

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Problanco Electronics

Mexico . 3,430 parts In-Stock

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S.R.D Solutions

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UHIMA Technologies

Türkiye . 110 parts In-Stock

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Overview

Discover the power of seamless switching with the SMMUN2111LT1G by Onsemi. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor (BJT) offers unparalleled performance in a compact package. Ideal for a range of applications, from automotive to industrial, this PNP transistor boasts a built-in resistor for added convenience. With a maximum collector-emitter voltage of 50V and a minimum DC current gain of 35, this product delivers reliability and efficiency like no other. Experience the difference today and elevate your projects to new heights with the SMMUN2111LT1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the package lightweight and durable, ideal for portable electronic devices.

Polarity or Channel Type: PNP

PNP type transistors are commonly used in high-side switching applications, offering versatility in circuit design.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Built-in resistor simplifies circuit design and saves space on the PCB, making it more efficient.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance and fast response times.

Surface Mount: YES

Surface mount compatibility allows for easy and efficient assembly onto the PCB, saving time and labor costs.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and orientation on the PCB, optimizing space usage.

Terminal Form: GULL WING

Gull wing terminals provide secure soldering connections and excellent heat dissipation, enhancing overall reliability.

No. of Terminals: 3

Three terminals provide the necessary connections for control and power, simplifying circuit integration.

Maximum Power Dissipation (Abs): 0.4 W

High power dissipation capability ensures stable operation and prevents thermal issues in demanding applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, allowing for compact and lightweight electronic designs.

Minimum DC Current Gain (hFE): 35

Minimum DC current gain of 35 indicates good amplification capabilities, suitable for various signal processing tasks.

Maximum Collector-Emitter Voltage: 50 V

High maximum collector-emitter voltage rating of 50V ensures compatibility with a wide range of voltage levels in circuits.

Transistor Element Material: SILICON

Silicon material provides excellent performance, reliability, and temperature stability, ensuring consistent operation.

Maximum Collector Current (IC): 0.1 A

Maximum collector current rating of 0.1A supports moderate power requirements, suitable for various low-power applications.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides reliable solder joints and corrosion resistance, ensuring long-term performance.

Terminal Position: DUAL

Dual terminal position allows for flexible PCB layout options and easy connectivity in diverse circuit designs.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high reliability and quality for automotive and industrial applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMMUN2111LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SMMUN2111LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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