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SMMUN2213LT3G

Onsemi

SMMUN2213LT3G by Onsemi

Onsemi's SMMUN2213LT3G is a NPN BJT transistor with built-in resistor for switching applications. Features include hFE of 80, VCE of 50V, and IC of 0.1A. Its small outline package with gull wing terminals makes it suitable for surface mount designs in automotive electronics (AEC-Q101 compliant).

Median Price

$0.027

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 39,279 parts In-Stock

1+ parts

$0.180

100+ parts

$0.068

1k+ parts

$0.038

10k+ parts

$0.024

39,279

$0.180

$0.068

$0.038

$0.024

DigiKey

USA . 720 parts In-Stock

1+ parts

$0.240

100+ parts

$0.092

1k+ parts

$0.060

10k+ parts

$0.027

720

$0.240

$0.092

$0.060

$0.027

Verical

USA . 40,000 parts In-Stock

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$0.015

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$0.015

Arrow

USA . 40,000 parts In-Stock

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$0.017

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$0.017

Chip1Stop

Japan . 40,000 parts In-Stock

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$0.024

40,000

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$0.024

Rochester

USA . 9,830 parts In-Stock

1+ parts

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$0.030

1k+ parts

$0.025

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$0.023

9,830

-

$0.030

$0.025

$0.023

Distributors (In-Stock)

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Digiode

USA . 1,899 parts In-Stock

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$0.024

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1,899

$0.024

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Vyrian

USA . 1,504 parts In-Stock

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$0.024

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Flip Electronics

USA . 2,299,999 parts In-Stock

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2,299,999

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NAC Semi

USA . 910,000 parts In-Stock

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R&J Components

USA . 130,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 48,630 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 14,121 parts In-Stock

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Bristol Electronics

USA . 5,575 parts In-Stock

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$0.095

1k+ parts

$0.048

10k+ parts

$0.019

5,575

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$0.095

$0.048

$0.019

Dan-Mar Components

USA . 5,575 parts In-Stock

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Corphita

USA . 675 parts In-Stock

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$0.022

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675

$0.022

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Corohmni

South Africa . 259 parts In-Stock

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$0.024

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259

$0.024

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Continental Prestige Electronics

USA . 60,000 parts In-Stock

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$0.040

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$0.040

Infinite Electronics LLP (Excess)

. 50,002 parts In-Stock

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Kepictronics

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Lixinc

USA . 13,498 parts In-Stock

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Kulean Microsystems

USA . 6,906 parts In-Stock

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Formix International (Excess)

India . 5,000 parts In-Stock

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TANS Electronics

Latvia . 4,146 parts In-Stock

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Problanco Electronics

Mexico . 3,406 parts In-Stock

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SupplyDigital Components

Austria . 2,037 parts In-Stock

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UHIMA Technologies

Türkiye . 97 parts In-Stock

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Overview

Enhance your electronic designs with the SMMUN2213LT3G by Onsemi, a top-quality small signal BJT transistor that offers unparalleled performance and reliability. Manufactured by industry leader Onsemi, this NPN transistor is perfect for switching applications and comes in a convenient surface mount package. With built-in resistors and a high DC current gain, this transistor provides exceptional value and efficiency for all your circuit needs. Trust Onsemi to deliver cutting-edge technology and superior products for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering good performance characteristics.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient operation.

Surface Mount: YES

The surface mount capability allows for easy and compact installation on PCBs.

Package Shape: RECTANGULAR

The rectangular shape makes it easier to orient and place the transistor on the PCB.

Terminal Form: GULL WING

Gull wing terminals provide good mechanical strength and easy solderability for reliable connections.

No. of Terminals: 3

Having 3 terminals allows for flexibility in circuit configurations and connections.

Package Style (Meter): SMALL OUTLINE

The small outline package saves space on the PCB and is suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 80

A high minimum DC current gain ensures stable and consistent amplification in various applications.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating allows for operation in a wide range of voltage levels.

Transistor Element Material: SILICON

Silicon transistors offer good performance characteristics and reliability compared to other materials.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current levels in switching applications.

Terminal Finish: Matte Tin (Sn) - annealed

The terminal finish provides corrosion resistance and good solderability for reliable connections.

Terminal Position: DUAL

Dual terminal positions offer flexibility in PCB layout and facilitate ease of connection.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures high quality and reliability for automotive applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMMUN2213LT3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SMMUN2213LT3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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